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2000ǯ09·î11Æü(·î) [nǯÆüµ­]

#1 CITIBANK

¤È¤ê¤¢¤¨¤ºÂè°ì´«¶ä¤ÎÉáÄ̸ýºÂ¤«¤é¥º¥Ð¥Ð¤ÈÍî¤È¤·¤ÆÆþ¶â¤·¤Æ¤ß¤¿¡£ µëÎÁ¤Î¿¶¹þ¸ýºÂ¤âÊѹ¹¤·¤¿¤¤¤Ê¡£¤Ç¤­¤ë¤«¤Ê¡£

#2 [URL] THE INTEGRATOR

yendot ¤«¤é¡£ ¤ª¤â¤·¤í¤¤ :-)

#3 fr196.pc.mycom.co.jp

µ×¡¹¤Ë¶§°­¤Ê¥¢¥¯¥»¥¹¡£
% grep fr196.pc.mycom.co.jp /var/log/apache/access_log | wc
   4897   58764  699135
% grep fr196.pc.mycom.co.jp /var/log/apache/access_log | grep diary | wc
   2312   27744  327267

#4 [URL][linux] Linux Graphics Release Notes: Intel 810 Chipset Family, Intel 815 Chipset Family

¥µ¡¼¥ÐÍѤΠmotherboard ¤Ë ASUS CUSL2 ¤òÇã¤Ã¤¿¤Î¤Ç¡¢²¼Ä´¤Ù¡£ ¤Þ¤¢ X Æ°¤«¤Ê¤­¤ã¤¢¤­¤é¤á¤ë¤À¤±¤Ê¤Î¤Ç¤¤¤¤¤Î¤À¤¬¡£

#5 [linux] dvipsk-ja

¤¢¤ê¤ã¡¢ ¤Þ¤ÀËܲȤËÆþ¤Ã¤Æ¤Ê¤«¤Ã¤¿ ¤ó¤Ç¤¹¤«(^^; ËܲȤΠBTS ¤ÎÊý¤ËÅꤲ¤Á¤ã¤Ã¤¿ ¤Ç¤¹¡£or.jp ¤ËÅꤲ¤Ê¤ª¤·¤¿Êý¤¬¤¤¤¤¤Ç¤¹¡©

#6 [labo][linux] new surf (2)

potato ¤ò¤µ¤¯¤Ã¤È¥¤¥ó¥¹¥È¡¼¥ë¡£ rescue, root, driver-[123] ¤Ç¡¢base ¤Ï NFS ¥¤¥ó¥¹¥È¡¼¥ë¡£ /boot ¤Ë 128M, swap 512M, / ¤Ë 2G¡£ »Ä¤ê¤Ï reiser ¤ÇŬµ¹³ÎÊݤ¹¤ëͽÄê¡£

¡÷ dual NIC:

1ËçÌܤΠNIC ¤Î HWaddr: 00:90:CC:0F:B8:8D¡£ ¤³¤Ã¤Á¤¬ eth0 ¤Ç¥í¡¼¥«¥ë¦¡£¾å¤ÎÊý¤Ë¤¢¤ë¥«¡¼¥É¡£

¡÷ reiser:

¤Ë¤¤¤Ã¤Æ ¤ò /usr/src ¤Ë¼èÆÀ¡£ apt-get install kernel-source-2.2.17 ¤·¤ÆŸ³«¤·¤¿¤¢¤È¡¢
# cd /usr/src/linux
# zcat ../linux-2.2.17-reiserfs-3.5.25-patch.gz | patch -p1
¤Ç̵»öÅö¤¿¤ë¡£ ¤¢¤È¤ÏÉáÄ̤˥«¡¼¥Í¥ë¤ò¤Ä¤¯¤ë¡£ make menuconfig ¤Î¤È¤­¤Ëʸ¶ç¤¤¤ï¤ì¤¿¤Î¤Ç¡¢ libncurses5-dev ¤òÆþ¤ì¤ë¡£¤¦¤¦¤à auto-apt ¤Û¤·¤¤¤Î¤ª(^^; ¥«¡¼¥Í¥ë¤¬¤Ç¤­¡¢ lilo ¢ªÌµ»ö¥ê¥Ö¡¼¥È¤·¤¿¤È¤³¤í¤Ç¡¢
# cd /usr/src/linux/fs/reiserfs/utils/
# make
# make install
cfdisk ¤Ç /dev/hda ¤òÀÚ¤êľ¤·¤Æ (OStype ¤Ï 83) ¤¤¤Ã¤Ú¤ó¥ê¥Ö¡¼¥È¡¢ mkreiserfs /dev/hda6, mkreiserfs /dev/hda7 ¤·¤Æ¡¢ /etc/fstab ¤Ë°Ê²¼¤Î¤è¤¦¤ËÄɵ­¡£
/dev/hda6       /home2                  reiserfs        rw      0       0
/dev/hda7       /var/spool/squid        reiserfs        rw      0       0
fsck ¥Ñ¥¹¤Ï 0 (tnx > ¤º¤Ü¤ó¤µ¤á)¡£ ¥ê¥Ö¡¼¥È¤·¤Æ̵»ö¥Þ¥¦¥ó¥È¤ò³Îǧ¡£
¥³¥á¥ó¥È [Á´ÉôÆɤà/Åê¹Æ¤¹¤ë]

2000ǯ09·î12Æü(²Ð) [nǯÆüµ­]

#1 [linux][labo] new surf (3)

Æþ´¹¤¨¤¿¡£¥á¡¼¥ë¤Ë¤Ï¤Þ¤ë¡£ sendmail ¤ò»È¤Ã¤Æ¤¤¤ë¤Î¤À¤¬¡¢ ½¾Íè¤Ï¥Ñ¥Ã¥±¡¼¥¸¤ËÉÕ°¤Î mail.local ¤Ç¥í¡¼¥«¥ëÇÛÁ÷¤·¤Æ¤¤¤¿¤Î¤¬¡¢ debian ¤À¤È /usr/bin/deliver ¤ËÊѤï¤Ã¤¿¡£ ¤³¤Á¤é¤Ç¤Ï CF ¥Ç¥Õ¥©¥ë¥È¤Î -d ¥Õ¥é¥°¤¬¤Ä¤¯¤È¡¢ ¼ÂºÝ¤Ë¤ÏÇÛÁ÷¤¬¹Ô¤ï¤ì¤Ê¤¤¡¢¤È¤¤¤¦¤Î¤¬°ìÅÀ¡£ ¤½¤ì¤«¤é /etc/shells ¤Ë¥æ¡¼¥¶¤Î passwd ¹Ô¤Î¥·¥§¥ë¤¬ÅÐÏ¿¤µ¤ì¤Æ¤Ê¤¤¤È
(username) doesn't have a valid shell for mailing to programs
¤È¤¤¤¦¥¨¥é¡¼¤Ë¤Ê¤Ã¤Æ .forward ·Ðͳ¤Î¼«Æ°¿¶¤êʬ¤±¤¬¤­¤«¤Ê¤¤¡¢ ¤È¤¤¤¦¤Î¤¬¤â¤¦°ìÅÀ¡£ ¸å¼Ô¤Ë¤ÏÆäˤϤޤꡢ°ì»þ¤Ï sendmail ¤ò¤¢¤­¤é¤á¤«¤±¤Æ exim, postfix ¤Ê¤É¤ò¤µ¤Þ¤è¤¤¡¢ ¤³¤Ã¤Á¤Ç¤Ï localnet ¤«¤é¤Î relay ¤¬¤Ç¤­¤Ê¤«¤Ã¤¿¤ê¤·¤Æ¤µ¤ó¤¶¤ó¤ÊÌܤˤ¢¤Ã¤¿¡£ exim ¤Ï /etc/exim.conf ¤Ë
host_accept_relay = "192.168.1.6"
¤È½ñ¤¤¤Æ¤ª¤¤¤Æ¤â 192.168.1.6 ¤«¤é¤Î relay ¤ò
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2000-09-12 01:02:22 unqualified recipient rejected: <nakano> H=migrate.babalab.a
p.seikei.ac.jp [192.168.1.6]
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¡÷ hns ´Ø·¸:

debian ¤Î apache ¤À¤È¡¢hns ¤Î CVS ¥Ä¥ê¡¼¤«¤é¤¶¤¯¤Ã¤ÈÆþ¤ì¤é¤ì¤ë¤Î¤Ç¤ä¤Ã¤Æ¤ß¤¿ *1 ¡£ºÇ½é cgi ¥½¡¼¥¹¤¬Ä¾¤Ë¸«¤¨¤Á¤ã¤Ã¤Æ¤¤¤¿¤Î¤À¤¬¡¢ ~/public/diary/.htaccess ¤Ë
AddHandler cgi-script .cgi
Options +ExecCGI
¤òÉÕ¤±¤¿¤é²ò·è¡£¤Þ¤¢ apache ¤ÎÀßÄê¤Ê¤ó¤Ç¤·¤ç¤Í¡£

*1: ¤³¤ì¤Þ¤Ç¤Ï httpd ¤Î uid ¤¬ nobody ¤¸¤ã¤Ê¤«¤Ã¤¿¤Î¤Ç¡¢ ¥¤¥ó¥¹¥È¡¼¥ë¸å¤Ë permission ¤ò¤¤¤¸¤é¤Ê¤±¤ì¤Ð¤¤¤±¤Ê¤¤¤Î¤¬ ¤Á¤ç¤Ã¤ÈÌÌÅݤÀ¤Ã¤¿¡£

#2 [LDP] 9/11 ¤Î update

#3 hns

¿·Ãåʬ¤Ï reverse ¤Ë¤·¤Æ¤ß¤¿ :-) n ǯÆüµ­µ¡Ç½¤â¡¢¤¢¤È£±¥ö·î¤¯¤é¤¤¤Ç³Ú¤·¤á¤ë¤è¤¦¤Ë¤Ê¤ë¤Ê¤¢ :-) :-)

#4 [labo][linux] new surf(4)

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¡÷ npc.cgi:

ÀΤª¤â¤·¤íȾʬ¤ÇÆþ¤ì¤¿¤Î¤Ë¡¢³ØÆâ¤Î¥æ¡¼¥¶¤¬¤Ä¤¤¤Æ¤¿¤Î¤ò˺¤ì¤Æ¤¿¡£ ËÜÂÎ¤Ï /usr/lib/cgi-bin/nph-npc.cgi, ¥¤¥ó¥Ç¥Ã¥¯¥¹¤Ï /var/lib/nph-npc/npc.idx ¤Ë¤·¤¿¡£

¡÷ apop:

¶µ¼ø¤¬ APOP ¥æ¡¼¥¶¤Ê¤Î¤Ç¡¢ popauth ¤ÇÄɲ䷤Ƥâ¤é¤¦¡£ /usr/share/doc/qpopper °Ê²¼¤Ë¤Ï¡¢ ¥Ñ¥Ã¥±¡¼¥¸¤Î INSTALL ¤Ë¤¢¤ë APOP ¤Î²òÀâ¤ËÅö¤¿¤ë¤â¤Î¤¬¤Ê¤¤¤ó¤À¤Ê¡£

¡÷ man-db:

mandb -c ¤·¤Ê¤¤¤È¡¢Äɲåѥ屡¼¥¸¤Î¥Þ¥Ë¥å¥¢¥ë¤¬Æɤá¤Ê¤¤¤È¤­¤¬¤¢¤ë¤Ê¤¢¡£ ¤Ê¤ó¤Ç¤¸¤ã¤í¡£

#5 Âç³Ø±¡»î¸³

3 ¸ÂʪÍý³Ø¤Î´ÆÆÄ¡£¤¦¤¦¤ó¡¢´Êñ¤ÊÌäÂê¤À¤Ã¤¿¤Î¤À¤±¤ì¤É¡¢ ¤Ç¤­¤¢¤Þ¤êÎɤ¯¤Ê¤¤¤è¤¦¤Ê...(^^;

#6 [URL][linux] ZDNet: Helpdesk Tips for Linux

¤ä¤é¤ì¤¿¤«(¤ï¤é

#7 [labo] AVS registration

º£Æü¤Þ¤Ç¤À¤Ã¤¿¡£´í¤Ê¤«¤Ã¤¿(^^;

#8 [linux] new surf (5) -- X

¤Þ¤º debian-users ¤Ç¤Á¤ç¤¦¤É i810 ¸þ¤±¤ÎÏÃÂ꤬¤¢¤Ã¤¿¤Î¤Ç¡¢ branden ¤µ¤ó¤Î¤È¤³¤«¤é 810-agpgart-module.tar.gz ¤òÍî¤È¤·¡¢ ÀîÆ£¤µ¤ó ¤Î¥ì¥Ý¡¼¥È¤Ë½¾¤Ã¤Æºî¶È¤·¤Æ¤ß¤ë¤â¡¢
# insmod agpgart.o
agpgart.o: init_module: Device or resource busy
Hint: this error can be caused by incorrect module parameters, including invalid IO or IRQ parameters
¤Ç¤¢¤¨¤Ê¤¯ÇÔÂà¡¢¤µ¤é¤Ë demsg ¤Ë¤Ï
Linux AGP GART interface v0.03 (c) Jeff Hartmann
-- Experimental distribution, only i810 enabled
agp_gart: no supported devices found
¤È½Ð¤Æ¤ª¤ê¡¢¤É¤¦¤ä¤é i815 ¤Ç¤Ï»È¤¨¤Ê¤¤¤Î¤À¤í¤¦¤ÈȽÃÇ¡£

¡÷ Intel(R) 815 Chipset Family:

¤È¤¤¤¦¤ï¤±¤Ç¡¢Intel ¤ÎÊý¤«¤é¼è¤Ã¤Æ¤­¤Æ¤ß¤ë¡£ ¥À¥¦¥ó¥í¡¼¥É¥Ú¡¼¥¸ ¤«¤éé¤Ã¤Æ XFCom_i810-1.2-3.i386.rpm ¤È I810Gtt-0.2-4.src.rpm ¤òÆþ¼ê¡£
% rpm2cpio I810Gtt-0.2-4.src.rpm | cpio -i -d
% tar zxf I810Gtt-0.2.tar.gz
# make install
¤Ç¥¤¥ó¥¹¥È¡¼¥ë¤·¤¿ agpgart.o ¤Ï¡¢¤¢¤Ã¤µ¤ê¤È insmod ¤Ç¤­¤¿¡£ dmesg ¤Î·ë²Ì¤Ï
Linux AGP GART interface v0.2 (c) Jeff Hartmann
-- Experimental distribution, only i810 and i815 enabled
Got pages for a 64 megabyte mapping for the agp aperature.
i810_configure
¤È¡¢¤³¤Ã¤Á¤Î¤Û¤¦¤¬¥Ð¡¼¥¸¥ç¥ó¤¬¿·¤·¤¤¤ß¤¿¤¤¡£

ͦÌö XF86_SVGA ¤ò¥¹¥¿¡¼¥È¤µ¤»¤è¤¦¤È»î¤ß¤ë¤¬¡¢ Debian ¤Î XF86_SVGA ¤Ç¤Ï¥°¥é¥Õ¥£¥Ã¥¯¥á¥â¥ê¤ò¼è¤Ã¤Æ¤¯¤ì¤Ê¤¤¡£ ¤Î¤Ç¡¢
% rpm2cpio XFCom_i810-1.2-3.i386.rpm | cpio -i -d
# cp usr/X11R6/bin/XFCom_i810 /usr/X11R6/bin
# cd /usr/X11R6/bin
# mv XF86_SVGA XF86_SVGA.potato
# mv XFCom_i810 XF86_SVGA
¤È¤·¤Æ¡¢Ìµ»öµ¯Æ°¡£ËüºÐ¡£ ¤Á¤Ê¤ß¤Ë XF86Config ¤È X µ¯Æ°»þ¤Îɽ¼¨ ¤Ï¤³¤ó¤Ê´¶¤¸¡£

#9 [linux] Re: potato ¤Ç IPMasquerade ¤Î´Ä¶­¤ò¹½ÃÛ¤·¤¿¤¤

ÉðÆ£¤µ¤ó¤Î²òÀâ¡£

#10 [paper] ±þÍÑʪÍý 2000 ǯ 8 ·î¹æ

¡ÖÆý¸: 20À¤µª¤Î±þÍÑʪÍý¤ò¤Õ¤ê¤«¤¨¤ë¡× ¤ÈÂꤷ¤Æ¡¢¤¹¤´¤¤¿Íã¤Î¥ì¥Ó¥å¡¼¤¬¤¿¤¯¤µ¤ó¡£ ÃΤäƤë̾Á°¤À¤±¤Ç¤â¡¢ ʼƣ¿½°ì(Á´ÈÌ)¡¢¹¾ºêÎè±÷Æà(ȾƳÂÎ)¡¢ÁúÅĸ÷°ì(¥ì¡¼¥¶¡¼)¡¢ ¿·¾±µ±Ìé(¼§À­)¡¢ÅÄÃæ¾¼Æó(ĶÅÁƳ)¡¢ ²¬Ìî¸÷¼£(±Õ¾½)¡¢¶â¸¶äì(ÇöË졦ɽÌÌ)¡¢ »ûÁÒÀ¶Ç·(·×»»ÊªÍý)¡¢ÈÄëÎÉÊ¿(¥×¥é¥º¥Þ)¡¢ ´ÅÍø½Ó°ì(¿ôÍý²Ê³Ø)¡£°Ê¾å¤â¤Á¤í¤ó·É¾Îά(^^;;;¡£ »×¤ï¤ºÆɤߤդ±¤ë¡£

¶â¸¶ÀèÀ¸¤Î¤Ï reference ¤â 100 °Ê¾å¡¢Èó¾ï¤ËÊÙ¶¯¤Ë¤Ê¤ë¡£ ¤¦¡¼¤à¡¢¤³¤¦¤¤¤¦¤Î¤ò¸«¤»¤é¤ì¤ë¤È¡¢¤ä¤Ã¤Ñ¤«¤Ê¤ï¤ó¤È»×¤Ã¤Æ¤·¤Þ¤¦¤Ê¤¢... ÊÙ¶¯¤¢¤ë¤Î¤ß¤¸¤ã (¢«¤Á¤ç¤Ã¤È¤ä¤ëµ¤¤Ë¤Ê¤Ã¤¿¤é¤·¤¤)¡£
¥³¥á¥ó¥È [Á´ÉôÆɤà/Åê¹Æ¤¹¤ë]

2000ǯ09·î13Æü(¿å) [nǯÆüµ­]

#1 [LDP] 9/13 ¤Î update

#2 É÷¼Ù

¹¢Äˤ¬¤¢¤Ã¤¿¤Î¤Ç¥¤¥ä¤Êͽ´¶¤Ï¤·¤Æ¤¤¤¿¤Î¤À¤¬¡¢ ¸áÁ°Ãæ¤Ï³±¡¦á⡦ɡ¿å¤Î½¸Ãæˤ²Ð¡£ ¸á¸å¤Ë¤Ê¤Ã¤Æ²óÉü¤·¤¿¤è¤¦¤Ê¤Î¤Ç½Ð¹»¡£

#3 µëÎÁ¿¶¹þ

CITIBANK ¤ËÊѹ¹¡£½ñÎà½ñ¤¯¤È¤­¡¢¿Í»ö²Ý¤Î¿Í¤Ë ¡Ö¤Ø¤¨¡¢(¸ýºÂ½êÍ­¼Ô̾) ±Ñ¸ì¤Ê¤ó¤Ç¤¹¤«¡Á¡×¤È¤Á¤ç¤Ã¤È¶Ã¤«¤ì¤¿¡£ ¤½¤¦¤¤¤¨¤Ð¤½¤¦¤À¤Ê¡£

#4 [URL] WEB Ëܤ먻ï

#5 [linux] /etc/apt/sources.list

¼èÆÀÀè¤ò RING servers ¤«¤é ÃϵåήÂÎÅÅǾ¶æ³ÚÉô ¤ËÊѹ¹¡£u-tokyo ¤ò»È¤ï¤»¤Æ¤¤¤¿¤À¤¯¡£ ¤³¤³¤Ï³Æ dists ¤ò¤­¤Ã¤Á¤ê¥ß¥é¡¼¤·¤Æ¤¯¤ì¤Æ¤ë¤ß¤¿¤¤¤Ç¤¢¤ê¤¬¤¿¤¤¡£

#6 [linux] ¥«¡¼¥ÉÆþ´¹¤¨

ÉáÃʻȤ¤¤Î¥Ç¥¹¥¯¥È¥Ã¥× (PIII 450MHz) ¤Î¥Ó¥Ç¥ª¥«¡¼¥É¤ò #9 FX Motion 771 PCI (S3 Vision968) *1 ¤«¤é S3 Savage4 Pro (AGP) ¤Î 16M ¤Î¥«¡¼¥É *2 ¤ËÊѹ¹¡£ Savage ¤Ç¤Ï 24bpp ¤¬»È¤¨¤Ê¤¤ ¤Î¤òÃΤ餺¤Ë¤Á¤ÈÖȤޤ롣 32bpp ¤Ë¤·¤Æ²ò·è¡£ XF86Config ¤Ï¤³¤ó¤Ê¤«¤ó¤¸¡£
*1: ¤Õ¡¢¸Å¤¤...
*2: i815 ¤Î¤¬Æ°¤¤¤¿ ¤Î¤Ç;¤Ã¤¿ :-)

#7 [linux] Re: ¥Ç¥£¥ì¥¯¥È¥ê¤Î¥°¥ë¡¼¥×´ÉÍý¤Ë¤Ä¤¤¤Æ

linux-users ML, ¤µ¤¯¤µ¤ó¡£ ¼Â¤Ï»ä¤â¥Ç¥£¥ì¥¯¥È¥ê¤Î sgid ¥Ó¥Ã¥È¤ÎÌò³ä¤òÃΤ俤ΤϺǶá¤À¤Ã¤¿¤ê(^^;

#8 [paper] JMR 15(7) July 2000

¡÷ JMR 15(7) pp.1551 (2000):

¦Â SiN ¤Ë¼´±þÎϤò¤«¤±¤Æ¹ßÉú¡¢ÁºÀ­ÊÑ·Á¤µ¤»¤ë¤È¡¢ grain ¤Î³¦ÌÌ¤Ë amorphous ¤ÊÁؤ¬¤Ç¤­¤ë¡£ ¤³¤Î¸ü¤µ¤ò HRTEM ¤Ç¬Äꤷ¤¿Ïᣠ±þÎϤ˿âľ¤Ê boundary ¤Î¸ü¤µ¤Ï Poission ʬÉÛ like, Ê¿¹Ô¤ÊÊý¤Ï 0 ¤«¤é¤°¤°¤Ã¤È²¼¤¬¤Ã¤Æ 8nm ÊÕ¤ê¤Ë¾®¤µ¤Ê»³¡£

#9 [paper] APL 76(25,26) 19,26 June 2000, 77(1) 3 July 2000

¡÷ APL 76(25) pp.3721 (2000):

¸ÇÂÎ Ar ¤Î X ÀþÎ嵯¥ë¥ß¥Í¥Ã¥»¥ó¥¹¤Î°µÎϰ͸À­¡£ Diamond Anvil Cell ¤Ç 7GPa °Ê¾å¤Î°µÎϤò¤«¤±¤Æ¬Äê¡£ ¤À¤¤¤¿¤¤ 16000 cm^-1 ¤¯¤é¤¤¤ÎÎ嵯¤Ç¡¢Ãæ¿´ÇÈĹ¤Î¥Ô¡¼¥¯°Í¸À­¤Ï -44 cm^-1/GPa ¤¯¤é¤¤¤È¤Î¤³¤È¡£ ¤à¤«¤·¡¢¥¹¥Ñ¥Ã¥¿ËìÃæ¤Î implanted Ar ¤«¤é¤Î¤³¤Îȯ¸÷»È¤Ã¤Æ Ëì¤Î±þÎϤòµá¤á¤¿Ï䬤¢¤Ã¤¿µ­²±¤¬¤¢¤ë¤¬...

¡÷ APL 76(25) pp.3727 (2000):

Al ÅÁƳÀþ¤Î EM ¤Ë¤è¤Ã¤ÆÀ¸¤¸¤¿±þÎÏʬÉÛ¬Äê¡£ X-ray microbeam topography techique¡£ ÅÁƳÊý¸þ¤Ë±þÎϤη¹¼Ð¤¬À¸¤¸¡¢¤³¤ì¤ÎÅÅή̩Åٰ͸À­¤Ê¤É¤ò¬¤Ã¤Æ¤¤¤ë¡£

¡÷ APL 76(26) pp.3882 (2000):

GaAs ¾å¤Ë MOVPE/MBE À®Ä¹¤µ¤»¤¿ (AlGa)As ¤Î cross section ¤ò STM ´Ñ»¡¡¢ Al ¤Î short range ordering ¤È³¦ÌÌ roughness ¤ò´ØÏ¢¤Å¤±¤Æ¤¤¤ë¡£ MOVPE ¥µ¥ó¥×¥ë¤Ç¤Ï Al Ç»Å٤θûÇÛ¤¬³¦ÌÌÉÕ¶á¤Ë¤¢¤ê¡¢ ¤³¤ÎÎΰè¤Ç¤ÎÀ®Ä¹Ãæ¤Î Al ¤Î±¿Æ°¤¬ roughness ¤Ë±Æ¶Á¤·¤Æ¤ë¤Î¤Ç¤Ï¡¢¤È¤¤¤¦µÄÏÀ¡£

¡÷ APL 77(1) pp.94 (2000):

Cu (In|Ga) (Se|Te) ¤«¤é¤Ê¤ë I-III-VI2, I-III3-VI5, I-III5-VI8 ·Ï»°¸µ²½¹çʪȾƳÂΤΠ¥Ð¥ó¥É¥®¥ã¥Ã¥×¤òÀ°Íý¡£ÆÃ¤Ë Cu vacancy ¤Î̵ͭ¤Ë¤è¤ë BE ¤Î°ã¤¤¤ËÃåÌÜ¡¢ CB minimum ¤È VB maximum ¤Î¥·¥Õ¥È¤Ë¤è¤Ã¤Æ¤¦¤Þ¤¯ÀâÌÀ¤Ç¤­¤ë¡¢¤È¤Î¤³¤È¡£ Se ¤È Te ¤Î°ã¤¤¤Ë¤Ä¤¤¤Æ¤âµÄÏÀ¤·¤Æ¤¤¤ë¡£

#10 [paper] PRL 84(25,26) 19,26 June 2000

¡÷ PRL 84(25) pp.5776 (2000):

2D ¾å¤Ç¤ÎÇ®ÅÁƳ¤Î¥·¥ß¥å¥ì¡¼¥·¥ç¥ó¤Ç¡¢³¦Ì̤ò¥Õ¥é¥¯¥¿¥ë¤Ë¤·¤Æ¤¤¤ë¡£ ·×»»¤Ï FEM¡£³¦Ì̤ò±Û¤¨¤ÆÅÁ¤ï¤ëÇ®Î̤ϡ¢fractal ¤Îºî¤êÊý¤Ë¤Ï ¤¢¤Þ¤ê°Í¸¤»¤º¡¢fractal ¼¡¸µ¤Ë±Æ¶Á¤µ¤ì¤ë¤È¤Î¤³¤È¡£

¡÷ PRL 84(25) pp.5792 (2000):

Si(111) ¾å¤Î EM ¤Î STM ´Ñ»¡¡£ ÂçÂÎ half cell ¤Ë¼ý¤Þ¤Ã¤Æ¤ë¥¯¥é¥¹¥¿ (filled ¤Ç¤â empty ¤Ç¤âÌÀÅÀ) ¤¬¡¢ hop ¤¹¤ë¤È ¿ô100angstrom °ÜÆ°¤¹¤ë¡¢¤È¤¤¤¦Ã諤¬°ìÅÀ¡¢ 2D ¤Î single step island ¤¬ EM ¤Ç²õ¤ì¤ë¤È¤­¤Ï¡¢²¼Î®Â¦¤«¤é ¤ä¤»ºÙ¤Ã¤Æ¤¤¤¯¡¢¤È¤¤¤¦¤Î¤¬¤â¤¦°ìÅÀ¡£

¡÷ PRL 84(25) pp.5800 (2000):

750eV ¤Î Ar+ ¥¹¥Ñ¥Ã¥¿¤Ç¹Ó¤é¤·¤¿ ripple ¹½Â¤¤Î Si(111) ¤ÎÁƤµ¤ò ¾º²¹ (600¡Á700¡î) ¤·¤Æ²óÉü¤µ¤»¡¢¿¶Éý¤Î¸½¾Ý¤ò AFM ¤Ç¸«¤¿Ïᣠexponential decay ¤Ç¤Ï¤Ê¤¯¡¢(1+kt)^-1 ¤ËÈæÎ㤷¤Æ¸º¾¯¤·¤Æ¤¤¤¯¤È¤Î·ë²Ì (k ¤Ï²¹ÅÙ¤È scale ¤ò´Þ¤àÄê¿ô)¡£ Ozdemir/Zangwill ¤ÎÍýÏÀ¤Ç¤¦¤Þ¤¯ÀâÌÀ¤Ç¤­¤ë¤È¤·¤Æ¤¤¤ë¡£ ´Êñ¤Ê summary ¤â¤¢¤ë¡£

¡÷ PRL 84(26) pp.6078 (2000):

ȾƳÂÎ-¶â°³¦Ì̤Ǥ褯¸«¤é¤ì¤ë Fermi level pinning ¤¬¡¢ ½¾Í褤¤ï¤ì¤Æ¤­¤¿ gap state ¤Ç¤Ï¤Ê¤¯¡¢ chemical bond ¤Î poralization ¤Ë¤è¤Ã¤Æ¤âÀâÌÀ¤Ç¤­¤ë¤è¡¢¤È¤ÎÏᣠ¤¤¤í¤¤¤í¤Êʪ¼Á¤Ç¤ÎÃͤ¬ universal ¤ÊľÀþ¤Ë¤¦¤Þ¤¯¤Î¤Ã¤Æ¤¤¤ë¡£

¡÷ PRL 84(26) pp.6110 (2000):

Cu(111) ¤ÎÈù¼ÐÌ̤Πangle resolved photoemission ´Ñ»¡¡£ miscut angle ¤¬ 7deg ¤ò¶­¤Ëž°Ü¤¬µ¯¤³¤ê¡¢ ÅŻҤÎÇÈÆ°´Ø¿ô¤¬ terrace ¤Ë confine ¤µ¤ì¤Æ¤¤¤ë¾õÂÖ¤«¤é¡¢ ɽÌÌÁ´Éô¤Ë¹­¤¬¤Ã¤Æ¤¤¤ë¤«¤¿¤Á¤Ë°Ü¹Ô¤·¤Æ¤¤¤ë¡¢¤È¤Î²ò¼á¡£
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2000ǯ09·î14Æü(ÌÚ) [nǯÆüµ­]

#1 PRL 85(1-3) 3,10,17 July 2000

85(1) ¤Ï¥Î¡¼¥Ò¥Ã¥È¡£

¡÷ PRL 85(2) pp.326 (2000):

Al(111) ¤ò 300K ¤Ç 1keV ¤Î Xe+ ¤Çᤤ¤Æ STM ´Ñ»¡¡£ Ä̾ï¤ÎÁÛÁü¤È¤ÏµÕ¤Ë¡¢À¹¤ê¾å¤¬¤Ã¤¿ island ¹½Â¤¤¬ (¤·¤«¤â²¿ÁؤˤâÀѤ߽ŤʤäÆ) ¤Ç¤­¤ë¡¢¤È¤Î·ë²Ì¡£ Thermal spike ¤Ç¡¢ ɽÌ̳°¤à¤­¤Ø¤Î atomic flow ¤¬À¸¤¸¤ë¤Î¤À¡¢¤È¤Î¥â¥Ç¥ë¤òÄó°Æ¤·¤Æ¤¤¤ë¡£

¡÷ PRL 85(2) pp.349 (2000):

Ç®»À²½¤µ¤»¤¿ SiO2/Si ³¦Ì̤òÂÐ¾Ý¤Ë pit ¤ò¥ê¥½¤·¤Æ¡¢ ÁƤµ¤ò light scattering ¤Çɾ²Á¡£ 4 ¼ïÎà¤ÎÇÈĹ¤È 3 ¼ïÎà¤ÎÆþ¼Í³Ñ¤Ç ellipsometry ¤·¡¢É½ÌÌ¡¦³¦Ì̤ÎÁƤµ¤òɾ²Á¤·¤Æ¤¤¤ë¡£ multilayer ¤ò°·¤¦¤Î¤Ë¤Ï¡¢ first-order vector perturvation theory ¤È¤¤¤¦¤Î¤ò»È¤Ã¤Æ¤¤¤ë¤é¤·¤¤¡£

¡÷ PRL 85(3) pp.495 (2000):

X ÀþÇÈĹɸ½à¤ò¡¢Fe ¤Î Mossbauer ¸ú²Ì¤ò»È¤Ã¤Æ¤Ä¤¯¤ë»î¤ß¡£ 0.86 angstrom ¤ÎÇÈŤ¬ 0.19ppm ¥ª¡¼¥À¡¼¤Çµá¤Þ¤Ã¤Æ¤¤¤ë¡£

¡÷ PRL 85(3) pp.606 (2000):

Cu(111) Ì̾å¤Ç¤Î Cu ¤Î diffusion ¤¬¡¢ sulfer ¤¬µÛÃ夷¤¿É½Ì̤ǤÏÂ礭¤¯¤Ê¤ë¸½¾Ý¤¬¤¢¤ë¤½¤¦¤Ê¤Î¤À¤¬¡¢ ¤³¤ì¤ò Cu3S3 ¥¯¥é¥¹¥¿¤ò VASP ¤È¤¤¤¦ ab initio calc. ¤Ç°·¤¤¡¢ ɾ²Á¤·¤Æ¤ß¤¿Ïᣤ³¤¤¤Ä¤Ï formation energy 0.28eV ¤Ç½ÐÍè¡¢ diffusion barrier ¤Ï 0.35eV °Ê²¼¤Ë¤Ê¤ë¤È¤Î·×»»·ë²Ì¡£

¡÷ PRL 85(3) pp.614 (2000):

binary deposition ¤Î phase separation ¤È surface roughness ¤ò "brick wall" model ¤Ç¥·¥ß¥å¥ì¡¼¥·¥ç¥ó¤¹¤ë»î¤ß¡£

#2 É÷¼Ù¤Ê¤ª¤Ã¤¿¡©

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#3 [labo] AVS proceedings (3)

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#4 [linux] [debian-users:24034] Re: font with platex (Re: [Q]latex)

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#6 [URL] ·×»»´ØÏ¢¤Î RPM's

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#7 [URL] squid ¤Î¥í¥°²òÀÏ

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#8 [URI] GRI

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#9 [paper] JJAP (part2) 39(8A,8B) 1,15 August 2000

¡÷ JJAP (part2) 39(8A) pp.L847 (2000):

TiO2 ·ë¾½ (Rutile, Anatase) ¤Î¥Ð¥ó¥É·×»»¡£ Troullier-Martinse type ¤È Teter type ¤Î pseudopotential ¤ò»È¤Ã¤¿ LDA¡£

¡÷ JJAP (part2) 39(8B) pp. (2000):

ÃÞÇÈÂ祰¥ë¡¼¥×¡£Cu2O Ëì¤Î reactive RF magnetron ¥¹¥Ñ¥Ã¥¿¡£ XRD ¤Ë¤è¤ë·ë¾½À­¡¢Æ©²á¥¹¥Ú¥¯¥È¥ë¤«¤é¥Ð¥ó¥É¥®¥ã¥Ã¥×¡¢ Hall ¬Äê¡¢AFM morphorogy¡£´ðÈIJ¹ÅÙ (RT, 400¡î, 500¡î) ¤ÇÀ°Íý¡£

#10 [paper] JJAP (part1) 39(7B,8) July, August 2000

7B ¤Ï special issue¡£ "Surface Science for Micro- and Nano-Device Fabrication" ¤ÈÂꤷ¤Æ¡¢ºòǯ 12 ·î¤ËÁá°ðÅĤdz«¤«¤ì¤¿ ISSS-3 ¤Î proc ½¸¡£ ÆÃ¤Ë hit ¤Ï¤Ê¤·¡£

¡÷ JJAP (part1) 39(8) pp.4733 (2000):

p-Si/N2O/TiN ¤Î capacitor ¤Ç TiN depo Ãæ¤Ë¼õ¤±¤ë¥À¥á¡¼¥¸¤ò Rapid Thermal Annealing ¤Ç²óÉü¡¢flat-band voltage ¤È ³¦Ì̤ξõÂÖÌ©ÅÙ¤òɾ²Á¡£ post treatment ¤È¤·¤Æ¡¢N2 ¥×¥é¥º¥Þ¤Ç½èÍý¤·¤Æ¤¢¤²¤ë¤È leak current ¤¬ ÍÞÀ©¤Ç¤­¤ë¤È¤«¡£

¡÷ JJAP (part1) 39(8) pp.4816 (2000):

Å칩Â羮Ĺ°æ¸¦¤Î¥°¥ë¡¼¥×¡£ Cu(InGa)Se2 ¤ÎÀ®Ä¹ºÇ½ªÃʳ¬¤Ç Zn ¤ò¥É¡¼¥Ô¥ó¥°¤·¤Æ p¢ªn conversion ¤òÀ¸¤¸¤µ¤»¡¢ pn ¤Î homojunction ¤òºî¤í¤¦¤È¤¹¤ë»î¤ß¡£ CIGS À®Ä¹¸å¤Ë Zn flux ¤òÅö¤Æ¤ë¤«¤¿¤Á¤Ç¡¢ÂÀÍÛÅÅÃÓÆÃÀ­¤¬¸þ¾å¡£ ºÇ¸å¤ÎÊý¤Î In+Ga+Se flux ¤Ë Zn ¤òº®¤¼¤ë¤ä¤êÊý¤Ï¤¢¤Þ¤êÎɤ¯¤Ê¤«¤Ã¤¿¤È¤Î¤³¤È¡£

¡÷ JJAP (part1) 39(8) pp.4890 (2000):

Íý²ÊÂç»°±º¤µ¤ó¡£0.1 Pa °Ê²¼ÄøÅ٤ΠMagnetron discharge ¤Ç¡¢ electron ¤Î escape ¤ò¹Íθ¤ËÆþ¤ì¤¿ÊüÅÅ¥â¥Ç¥ë¡£ÅÅή¤ò°µÎϤdzä¤Ã¤¿ "Discharge Intensity" ¤¬ÊüÅÅÅÅ°µ¡¦°µÎÏ¡¦¼§¾ì¤Ë¤É¤¦°Í¸¤¹¤ë¤«¤ÇÀ°Íý¡£ ¼Â¸³¤È¤ÎÈæ³Ó¤â¤¢¤ë¡£

#11 [paper] PRB 61(22-24) 1,15 June 2000

Ⱦ´üʬ½ª¤ï¤ê¡£22 ¤Ï¥Î¡¼¥Ò¥Ã¥È¡£

¡÷ PRB 61(23) pp.15649 (2000):

Liu ÀèÀ¸¤Î binary metal amorphization ¤Î¤ªÏᣠatomic volume ¤ÎÈæ¤È melting temperature ¤«¤é·è¤Þ¤ë ¦Ê¤È¤¤¤¦¥Ñ¥é¥á¡¼¥¿¤ÇÀ°Íý¤Ç¤­¤ë¡¢¤È¤¤¤¦¤Î¤¬º£²ó¤Î¿·µ¡¼´¡£

¡÷ PRB 61(23) pp.15993 (2000):

rough surface ¤Ë¤ª¤±¤ë exiton resonance ¶áÊդǤΠlight scattering ¤ÎÍýÏÀ¡£ first-order perturbation theory ¤Ç¤Î¼è¤ê°·¤¤¡£

¡÷ PRB 61(23) pp.16029 (2000):

III-V ·Ï²½¹çʪȾƳÂÎ¤Ç¤Î¥Ø¥Æ¥í¥¨¥Ô¤Ë¤ª¤±¤ë¡¢ lattice match/mismatch ¤È surface roughness ¤Î´Ø·¸¤ò strain relaxation ¤È´ØÏ¢¤µ¤»¤ÆµÄÏÀ¡£

¡÷ PRB 61(23) pp.16052 (2000):

Cu(InGa)Se2/CdS/ZnO ¤ÎÂÀÍÛÅÅÃÓ¹½Â¤¤ÎÅÁƳÆÃÀ­¡£ liq.N2 ²¹Åٰʲ¼¤Ç¡¢DC conductance ¤Ï variable range hopping model ¤Î T^-1/4 °Í¸¡¢¼þÇÈ¿ô°Í¸À­¤Ï ¦Ø^0.87 ¤ËÈæÎ㤹¤ë¤È¤¤¤¦·ë²Ì¡£ defect states ¤òÄ̤¸¤Æ¤Î carrier Í¢Á÷¤Ç¤¢¤ë¤È¤Î¹Í»¡¡£

¡÷ PRB 61(23) pp.16121 (2000):

Au/Si(111) ¤Î PEEM ¬Äê¡¢1x1 ¤Ê 1ML Au ¤È 7x7 Si ¤Î¶­³¦¤¬¡¢¥¢¥Ë¡¼¥ë¤È¤È¤â¤Ë 5x1, ­õ3x­õ3 ¤ÈÎΰ褬¹­¤¬¤Ã¤Æ¤¤¤¯¤Î¤ò´Ñ»¡¡¢ diff. consts ¤òµá¤á¤Æ¤¤¤ë¡£ 985K ¤Ç¡¢ 7x7 ¾å 5.2x10^-8 cm^2/s¡¢5x1 ¾å 1.2x10^-7 cm^2/s ¤È¤Î·ë²Ì¡£

¡÷ PRB 61(23) pp.16137 (2000):

TiN(001)/MgO ¤Ê¥¨¥Ô¤òÈ¿±þÀ­ dc ¥¹¥Ñ¥Ã¥¿¤ÇÀ®Ä¹¡¢ STM ´Ñ»¡¡£ ´ðÈIJ¹ÅÙ¤Ï 650¡Á750¡î anode ¤ò°ì¸Ä;·×¤ËÆþ¤ì¤Æ N+ flux ¤Îenergy ¤ò¥³¥ó¥È¥í¡¼¥ë¡¢ 43eV ÄøÅ٤Ρ¢defect production threshold ÊÕ¤ê¤Î¥¨¥Í¥ë¥®¡¼¤À¤È¡¢ roushness ¤¬¸º¾¯¤¹¤ë¡¢¤È¤Î·ë²Ì¡£ Ê£¿ô¤Î layered mound ¤«¤é¤Ê¤ë¹½Â¤¤¬¤Ç¤­¤ë¤¬¡¢¤½¤Î´Ö³Ö¤¬¹­¤¬¤ë¤È¤«¡£ top layer ¤Î critical radius ¤Ë¤Ä¤¤¤Æ¤â¸ÀµÚ¡£

¡÷ PRB 61(24) pp.R16355 (2000):

ɽÌ̤βóÀޤȡ¢¥Ð¥ë¥¯¤Ç°ì²ó²óÀÞ¤·¤¿ flux ¤Ë¤è¤ë»¶Íð¤Î´³¾Ä¤Ç¡¢ ɽÌ̲óÀޤΠphase ¤¬¤ï¤«¤ë¤ó¤Ç¤Ï¤Ê¤¤¤«¤È¤ÎÄó°Æ¡£ Ge(113)-3x1 ¹½Â¤¤Ç ¼ÂºÝ¤Ë X Àþ¤ò¤¢¤Æ¤Æ´³¾Ä¤¬À¸¤¸¤ë¤Î¤ò demonstrate ¤·¤Æ¤¤¤ë¡£

¡÷ PRB 61(24) pp.16948 (2000):

MgO(100)/Ag(100) ¤Î UPS & XPS/Auger ¬Äê¡£ O 2p ¤¬ Ag 5sp ¤È¶¯¤¯º®À®¤¹¤ë¤³¤È¡¢ ¤Þ¤¿¤³¤Î·Ï¤¬ H2O ¤Î chemisorption ¤ËÈó¾ï¤ËÂ礭¤ÊÈ¿±þÀ­¤ò»ý¤Ã¤Æ¤ª¤ê¡¢ ÅŻҾõÂ֤Ȳ¿¤é¤«¤Î´Ø·¸¤¬¤¢¤ë¤Î¤Ç¤Ï¤Ê¤¤¤«¤ÈµÄÏÀ¡£

#12 [paper] MRS Bulletin 25(8) August 2000

Æ©ÌÀÅÁƳÀ­»À²½ÊªÆý¸¹æ¡£ Å칩Âç (µì) ÀîÉû¸¦¤ÎÆ©ÌÀ»À²½ÊªÈ¾Æ³ÂΤˤè¤ë pn Àܹç·ÁÀ®¡¢ ¶âÂô¹©Âç ÆîÀèÀ¸¤Ë¤è¤ë 3 ¸µ·Ï¤Î review ¤Û¤«¡£

#13 [LDP] 9/14 ¤Î updates

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2000ǯ09·î15Æü(¶â) [nǯÆüµ­]

#1 [paper] JAP 88(4-6) 15 August, 1,15 September 2000

¡÷ JAP 88(4) pp.1756 (2000):

̾Âç¸åÆ£ÀèÀ¸¤Î¥°¥ë¡¼¥×¡£ EBEP (Electron Beam Enhanced Plasma) ¤È¤¤¤¦ÊýË¡¤Çºî¤Ã¤¿¥×¥é¥º¥ÞÃæ¤Î N atom density ¤ò optical absorption ¤Ç¬Äê¡£ EBEP ¤Ï°ì¼ï¤Î¥ê¥â¡¼¥È¥×¥é¥º¥Þ ¤ß¤¿¤¤¡£ref 9 ¤¬·×»»ÊýË¡¡£ Mitchell & Zemansky "Resonance Radiation and Excited Atoms", Cambridge Univ. Press 1971¡£ amazon ¤Ç¤Ï 404 (^^; EB ÅÅή¡¦ÅÅ°µ¡¢ N2 gas pressure ¤ËÂФ¹¤ë°Í¸À­¡£ ¤³¤ì¤â 10^11 cm^-3 ¥ª¡¼¥À¡¼¤À¤Í¡£

¡÷ JAP 88(4) pp.1776 (2000):

Spain ¤Î¥°¥ë¡¼¥×¡£ CIGS ¤Î¿·ë¾½»ñÎÁ¤ò¥¢¥ó¥×¥ë¤Çºî¤Ã¤Æ EDAX, XRD, ÀÖ³°È¿¼Í¡£ ¤¤¤Ã¤Ú¤ó¤ËÁÈÀ®·¹¼Ð¤Î¤¢¤ë¥µ¥ó¥×¥ë¤òºî¤Ã¤¿¤é¤·¤¤¤¬¡¢¤Ê¤ó¤«¤³¤ì¥Ð¥é¥Ð¥é¤Ê¤è¤¦¤Ê... ¤Þ¤¢ÀÖ³°Îΰè¤Ç¤Î¿¶Æ°»Ò¥Ñ¥é¥á¡¼¥¿¤È¤«¤¬ºÜ¤Ã¤Æ¤ë¤Î¤Ç¡¢»È¤¨¤ë¤«¤â¡¢¤¯¤é¤¤¡£

¡÷ JAP 88(4) pp.1867 (2000):

Ta or TiN ¾å¤Ë CVD ¤Ç Cu ¤ò¾øÃå¡¢roughness evolution, ³¦Ì̤Πvoid formation ¤Î¸¦µæ¡£ nucleation ¤ÎÃʳ¬¤ò AFM ¤Ç´Ñ»¡¡¢ PVD ¤ËÈæ¤Ù¤ÆÉý¹­¤á¤Î height histgram¡£ ³¦Ì̤Πvoid ·ÁÀ®¤ò Herring ¤ÎÏÀʸ¤Ë½¾¤Ã¤Æ¹Í»¡¡£coalescence ¤¬µ¯¤³¤ëÁ°¤Ë grain ¤Î¤«¤¿¤Á¤¬ spherical ¢ª non-spherical ¤ËÊѤï¤ë¤È void ¤¬È¯À¸¤¹¤ë¤È¤Î¤³¤È¡£

¡÷ JAP 88(4) pp.1880 (2000):

CoPt-SiO2 ¤Î granular (¡Á10nm) ¤ÊËì¤Ë CN ¤òÉÕ¤±¡¢"nanoscratch technique" ¤Ç adhesion ¤ò¬Äꤷ¤¿Ïá£diamond stylus, 1um/s ÄøÅÙ¤Ç 100um °ú¤ÃÁߤ­¡¢ Á´ÂÎ¤Ç 0.02¡Á3.02mN ¤ÎÎÏÁý²Ã¡£¤â¤È¤Î CoPt-SiO2 ¤Î volume ¤òÊѲ½¤µ¤»¤Æ ¬Äꤷ¡¢SiO2 ¤Ø¤Î adhesion ¤¬¶¯¤¤¡¢¤È¤Î·ëÏÀ¡£

¡÷ JAP 88(4) pp.1923 (2000):

Chalcopyrite ȾƳÂΤΠCuAlSe2 ¤òñ·ë¾½À®Ä¹¡¢Ê¬¸÷¥¨¥ê¥×¥½¤Ç³ÆÌ̤ò¬¤ê¡¢ ͶÅťƥ󥽥ë¤ò·èÄꤷ¤¿¡£ÇÈĹÈÏ°Ï¤Ï 1.4¡Á5.2eV¡£

¡÷ JAP 88(5) pp.2234 (2000):

Ar glow discharge ¤Ç¤Î¥¬¥¹²¹Å٤η׻»¡£1D¡£ ¥¤¥ª¥ó²½²áÄø¤ò Monte Carlo¡¢electron/ion density ¤È electric field ¤ò½Ð¤¹¡£ ¥¬¥¹²¹ÅÙ¤Ï thermal diff eq. ¤Ç°·¤¤¡¢ Jourle ²ÃÇ®¥â¥Ç¥ë¡£ 300V, 1mA/cm-2¡¢1Torr 1.5cm gap ¤Ç¡¢cathode ÉÕ¶á¤Î²¹ÅÙ¤¬ ¤À¤¤¤¿¤¤ 340¡Á350K ¤¯¤é¤¤¡£

¡÷ JAP 88(5) pp.2263 (2000):

ÀÅÂç/Anelva¡£ "supermagnetron plasma" *1 ¤Î¥×¥í¡¼¥Ö¬Äê¡£ continuous/pulse-modulated rf¡£ electron density/temperature ¤Î°µÎϰ͸À­¡¢Î¾ÅŶˤΠrf phase °Í¸À­ (0/180deg)¡¢ pulse modulation ¤Î duty time °Í¸À­¡£

¡÷ JAP 88(5) pp.2912 (2000):

AFM cantilever ¤Î mechanical impedance ¤ò ¡Á70kHz ¤Þ¤Ç¤ÎÎΰè¤Ç·èÄꤹ¤ëÏᣠ¥ß¥½¤Ï point force / sinusoidal force ¤ò¥Á¥Ã¥×¤ËÂиþ¤µ¤»¤¿ÅŶˤò»È¤Ã¤Æ ¤Ä¤¯¤ë¤È¤³¤í¡£ÍϱÕÃæ¤Ç¤â·èÄê¤Ç¤­¤ë¡£

¡÷ JAP 88(6) pp.3190 (2000):

Hg 185nm radiation ¤Î decay time ¤ò¬Äꤷ¤¿Ïᣠtwo step pump, decay time ¤ÎÌ©ÅÙ¡¦buffer gas (Ar) °µÎϰ͸À­¡£ decay time ¤Î Monte Carlo model ¤È¤¤¤¦¤Î¤¬¤¢¤ë¤é¤·¤¯¡¢ ¼Â¸³·ë²Ì¤È³ä¤ËÎɤ¤°ìÃס£Ì©ÅÙ¤Ï 10^20¡Á22 m^-3 ÄøÅÙ¡¢ decay time ¤Ï us ¥ª¡¼¥À¡¼¡£ ÏäȤ·¤Æ¤Ï Cu OES ¤Î self absorption ¤È¤Á¤ç¤Ã¤È»÷¤Æ¤¤¤ë¡£ Í×Æɤ߹þ¤ß¡£

¡÷ JAP 88(6) pp.3208 (2000):

Univ. of Wisconsin-Madison ¤Î¥°¥ë¡¼¥×¡£ ionized Ar/Cu magnetron sputtering system ¤Î absorption ¬Äê¤Ë¤è¤ë ground/excited state ¤Î Cu ¸¶»Ò¤ÎÌ©ÅÙ¬Äê¡£¥â¥í¤«¤Ö¤ê¤À(^^;¡£ ¸÷¸»¤Ï Xe lamp¡¢°µÎÏ 10¡Á30 mTorr, ¥¿¡¼¥²¥Ã¥È·Â 34cm, sputter power 0¡Á200 W, rf 1000¡Á2000W ¤Ç groud state ¤¬ 10^10¡Á12 cm^-3¡¢ metastable ¤¬ 10^10 ¤¯¤é¤¤¡£ Ar ¤Î metastable ¤âɾ²Á¡£

¡÷ JAP 88(6) pp.3301 (2000):

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¡÷ JAP 88(6) pp.3439 (2000):

CuIn_xTe_y (x=1,y=3 / x=3,y=5 / x=3, y=8) ³Æ·ë¾½¤Î Raman ¥¹¥Ú¥¯¥È¥ë¬Äê¡£ vibration mode ¤ò¤½¤ì¤¾¤ì assign, teble ¤Ë¤Þ¤È¤á¤Æ¤¢¤ë¡£

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#2 [linux] [summary] page alignment with Ghostscript

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#6 [paper] JVST A18(4) July/August 2000

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¡÷ JVST A18(4) pp.1119 (2000):

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¡÷ JVST A18(4) pp.1202 (2000):

polycrystalline Cu ¤Î strength ¤Î·×»»¡£EM¡£ grain ¥µ¥¤¥º¤Î¥ë¡¼¥È¤ËÈ¿ÈæÎ㤷¤Æ¶¯ÅÙ¤¬Äã²¼¤¹¤ë·ë²Ì¡£ ·ë¾½Î³³¦Ì̤ò¤ß¤ë¤È¡¢ dislocation ¤Ï compressive ¦¤ÇÀ¸¤¸¤Æ¤¤¤ë¤¬¡¢¤³¤ì¤Ï stacking fault ¤Î¥¨¥Í¥ë¥®¡¼¤¬ compressive ¦¤Î strain ¤ÇµÞ·ã¤ËÄã²¼¤¹¤ë¤«¤é¤À¡¢ ¤È¤ÎµÄÏÀ¡£

¡÷ JVST A18(4) pp.1395 (2000):

Thomson »¶Íð¤ò»È¤Ã¤Æ rf ¥×¥é¥º¥Þ¤ÎÅÅ»ÒÌ©ÅÙ¡¦²¹ÅÙ¤ò¬Äꤹ¤ë»î¤ß¡£ Nd YAG (532nm) ¤òÆþ¤ì¤Æ¦Ì̤«¤éÇÈĹ¥·¥Õ¥È¤ËÂФ¹¤ë¶¯ÅÙ¬Äê¡£ log signal vs (¦¤¦Ë)^2 ¤Î¥°¥é¥Õ¤«¤é¤ÏÅŻҲ¹ÅÙ¤¬½Ð¤ë¤é¤·¤¤¡£ ¥¹¥í¡¼¥×¤Ï³Î¤«¤ËÂçÂÎľÀþ¤Ë¤Ê¤Ã¤Æ¤Ï¤¤¤ë¡£ °µÎÏ¡¦¥¬¥¹ÁÈÀ® (Ar, Ar+O2) ¤Ê¤É¤ËÂФ¹¤ë°Í¸À­¡£ Ì©ÅÙ¤ÎÃÍ¤Ï ¡Á10^11 cm^-3 ¤È¸À¤Ã¤Æ¤¤¤ë¤¬¡¢ÀäÂÐÃͤάÄê¤ÏÆñ¤·¤½¤¦¡£

¡÷ JVST A18(4) pp.1533 (2000):

Sweden ¤Î¥°¥ë¡¼¥×¡£Ivan Petrov ¤µ¤ó¤¬ Univ. of Illinois ½ê°¤Ç¶¦Ãø¤Ë¤Ê¤Ã¤Æ¤ë¡£ ionization sputtering »Ø¸þ¤Î¡¢DC pulsed sputtering (50Hz, pulse width 50¡Á100um, pulse peak ¡Á1.2kV) ¤À¤½¤¦¡£ Langmuir probe, OES measurements. OES ¤ò pulse ¸å¤Î»þ´Ö·Ð²á¤ËÂФ·¤Æ¤È¤ë¤È¡¢ºÇ½é Ar ¤«¤é¤Îȯ¸÷¤¬¶¯¤¯¡¢ ¸å¤Ë metal (Cu) ¤«¤é¤Î¶¯ÅÙ¤¬¾å¤¬¤ë·ë²Ì¡£ ¥¿¡¼¥²¥Ã¥È¶á˵¤Ç¡¢metal ¤Îȯ¸÷¤¬¶¯¤¤ÊÕ¤ê¤Î electron density ¤Ï 10^13 cm^-3 ¤È¤«¡£

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hollow-cathode ·¿¤Î magnetron ¥½¡¼¥¹¤ò»È¤Ã¤¿¡¢ ¤³¤ì¤â ionized deposition »Ø¸þ¤ÎÏÀʸ¡£ substrate ¶á˵¤Î¥×¥é¥º¥ÞÌ©ÅÙ¤ò Langmuir probe ¤Ç¬¤Ã¤Æ 10^11¡Á12 cm^-3¡¢ Ti, TiN, Ta, TaN, Cu ¤Ç trench filling ¤ò¤ä¤Ã¤Æ¡¢ Éý 0.25um¡¢aspect ratio 5 ¤¯¤é¤¤¤Ç 20¡Á40% ¤¯¤é¤¤¤Î bottom coverage¡£

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IBM Microelectronics¡£ ¥À¥Þ¥·¥ó¤Î seed layer ¤¬ ionized depo ¤È collimated depo ¤È¤É¤Ã¤Á¤¬¤¤¤¤¤«Ä´¤Ù¤¿ÏÀʸ¡£ collimation ¤Î aspect ratio ¤Ï 1¡£ bottom/sidewall coverage ¤Ï IPVD ¤¬Îɤ¯¡¢¤«¤Ä roughness ¤â¾®¤µ¤¤¡£ electroplate ¤·¤¿¸å¤ÎÃÇÌÌ SEM ¤Ï¤¢¤Þ¤êÊѤï¤é¤Ê¤¤¤¬¡¢ Åŵ¤ÅªÆÃÀ­¤Ï IPVD ¤ÎÊý¤¬Îɤ¯¡¢¤³¤ì¤é¤Ï seed layer ¤Î coverage ¤òÈ¿±Ç¤·¤Æ¤¤¤ë¤È¤Î¤³¤È¡£

¡÷ JVST A18(4) pp.1584 (2000):

¶âÂô¹©Âç ÆîÀèÀ¸¤Î¥°¥ë¡¼¥×¡£ZnO:Al ¥¹¥Ñ¥Ã¥¿Ëì¤Î ´ðÈľå¤Ç¤ÎÅŵ¤ÆÃÀ­Ê¬ÉÛ¡£´ðÈIJ¹ÅÙ 200¡î¡¢350¡î¡¢ DC/RF¡¢ °µÎϰ͸À­¡£¤Þ¤á¤À(^^; ´ðËÜŪ¤Ë¤Ï erosion track ¤ËÂиþ¤¹¤ëÉôʬ¤Ç¤ÎÎô²½¤¬¡¢ÆÃ¤Ë DC ¤ÇÂ礭¤¯¤Ê¤Ã¤Æ¤¤¤ë¡£ oxygen ¤Ë¤è¤ë¥À¥á¡¼¥¸¤Ç¤¢¤í¤¦¡¢¤È¤ÎµÄÏÀ¡£

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Ag ¤ò DC/MF (mid frequency) ¥¹¥Ñ¥Ã¥¿¤Ç¤Ä¤±¡¢ 625nm ¤È 800nm ¤Ç¤Î¥¨¥ê¥×¥½¤È AFM ¬Äê¡£¥ß¥é¡¼ÍøÍÑ¡£ ¥¬¥¹¼ï (Ar, Kr, Ne)¡¢°µÎÏ¡¢´ðÈIJ¹ÅÙ¡¢ÅÅÎÏÌ©ÅÙ¡¢¤Ê¤É¤òÊѲ½¡£ MF, Äã²¹, Äã°µÎÏ, ÄãÅÅÎÏ, ¤¬¤¤¤¤¤È¤Î·ë²Ì¡£ ¥¬¥¹¼ï¤Ï¤¢¤Þ¤êÈ¿¼Í¤Ë¤Ï´Ø·¸¤Ê¤·¡¢¤é¤·¤¤¡£ Ëì¸ü¤Ï 80 nm ¶áÊÕ¤¬°ìÈÖÈ¿¼ÍΨ¤¬¹â¤¯¤Ê¤ë¤È¤Î¤³¤È¡£

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PTFE ¤Î rf ¥¹¥Ñ¥Ã¥¿¡£energy analyzer ÉÕ¤­ SIMS ¤Ç¤Î³Æ¼ï¬Äê¡£ invited ¤é¤·¤¤¡£review ¤È¤·¤Æ½ÅÊõ¤¹¤ë¤«¤Ê¡£

¡÷ JVST A18(4) pp.1668 (2000):

rf ¥¹¥Ñ¥Ã¥¿¤Ç ITO Ëì¤ò¤Ä¤¯¤ëºÝ¤Î¡¢ Ëì¤ÎÀ­¼Á¤Î target-substrate distance °Í¸À­¡£ °µÎÏ¤Ï oxygen 4x10^-4, + Ar ¤Ç 4.8x10-3 Torr¡£ distance ¤Ï 50¡Á100cm¡£ deporate, XRD, SEM, Transmittancem & band gap meas., resistivity¡£ Î¥¤·¤¿¤Û¤¦¤¬ (110) ¤¬Î©¤Ã¤Æ·ë¾½À­¤¬Îɤ¯¡¢mobility Â礭¤¤¡£ ÀÖ³°¤Ç¤ÎÆ©²áΨ¤âÂ礭¤¤¡£

¡÷ JVST A18(4) pp.1709 (2000):

ÆÈ Fraunhofer institute¡£ MF/DC reactive magnetron sputter ¤Î¥×¥í¥»¥¹À©¸æ¡£ Nb2O5¡£ ʬ¸÷¥¨¥ê¥×¥½¤Î in situ ¬Äê¤ò OES ¤È»ÀÁÇʬ°µÂ¬Äê¤Ë²Ã¤¨¡¢ »ÀÁÇʬ°µ¡¦ÊüÅÅÅÅ°µ/ÅÅÎϤòÀ©¸æ¡£ ¤É¤¦¤â¥Õ¥£¡¼¥É¥Ð¥Ã¥¯¤Î´Ø·¸¤¬ÌÀµ­¤µ¤ì¤Æ¤Ê¤¯¤Æ¤è¤¯¤ï¤«¤é¤ó¡£ depo rate ¤ÈÊüÅÅÅÅÎÏÌ©ÅÙ¤ÎÈ椬°ìÄê¤Ë¤Ê¤ë¤è¤¦¤ËÀ©¸æ¤¹¤ë¤È¡¢ ÉʼÁ¤¬Îɤ¯¤Ê¤ë¡¢¤È¸À¤Ã¤Æ¤¤¤ë¤¬¡£

¡÷ JVST A18(4) pp.1881 (2000):

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C Ëì¤Î¥¨¥Í¥ë¥®¡¼²ÄÊÑ¥¤¥ª¥ó¥Ó¡¼¥à¾øÃå¡£´ðÈÄ¤Ï Si¡£ ¾øÃåÁ°¡¢300¡Á500eV ¤Î C- ¤Ç᤭¡¢150eV ÄøÅ٤ΠC ¤Ç¾øÃå¡£ interface mixing ¤ò TEM ´Ñ»¡¡¢ EELS ¤Ç L ¥¨¥Ã¥¸¤ÎΩ¤Á¾å¤¬¤ê´Ñ»¡¡£ wear test ¤Î·ë²Ì¤Ï¡¢¾øÃåÁ°¤Î energy ¤¬¹â¤¤¤Û¤¦¤¬Îɹ¥¤ÊÉÕÃå¤ò¼¨¤·¤¿¤È¤Î¤³¤È¡£

¡÷ JVST A18(4) pp.2006 (2000):

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¡÷ JVST A18(4) pp.2033 (2000):

Angle resolved ESCA¡£ lubricant Ëì¤Î two-tiered model ¤È¡¢ »°³ÑÇÈ like ¤Ê texture model ¤ËÉÕ¤¤¤Æ¡¢ÍýÏÀŪ(?) ¹Í»¡¡£ yield ¤È³Æ model ¤Î¥Ñ¥é¥á¡¼¥¿¤ò¿Þ¼¨¡£
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#1 [linux] mph-get ¥Þ¥Ë¥å¥¢¥ë

.TH ¹Ô¤ÎÁ°¤Ë¶õÇò¤¬Æþ¤Ã¤Æ¤Æ roff ¤ËÄ̤¹¤ÈÌäÂ꤬½Ð¤Æ¤·¤Þ¤¦¤Î¤Ï ¸å¤Ç jitter ¤ËÊó¹ð¤¹¤ë¤È¤·¤Æ (¤¤¤ä¡¢ML ¤ÎÊý¤¬¤¤¤¤¤À¤í¤¦¤«¡£Á°¤â¤¢¤Ã¤¿¤·...)¡¢ ¤³¤ì¤òÆɤó¤Ç mph-get noinstall, noexist ¤òÃΤ롣¤¹¤´¤¯ÊØÍø¡£ ¤Þ¤º ¡Á1x ¤È̿̾¥Ý¥ê¥·¤¬Êѹ¹¤Ë¤Ê¤Ã¤Æ¤¿ kde ´Ø·¸¤ò¿·¤·¤¯¤¹¤ë :-)

¡÷ Ngraph:

Ngraph ¤¬ kondara ¤ËÅÐÏ¿¤µ¤ì¤Æ¤¿¤Î¤âÃΤé¤Ê¤ó¤À¡£ ¾åµ­ noinstall ¤Çȯ¸«¡£¤¿¤À¡¢ Ngraph script ³èÍÑË¡ ¤Ë¤¢¤ë¡ÖNGP ¥Õ¥¡¥¤¥ë¤«¤é GRA ¥Õ¥¡¥¤¥ë¤ò¼«Æ°À¸À®¤¹¤ë¥Þ¥¯¥í¡× ngp2.nsc ¤À¤±¤ÏÊ̤˼è¤Ã¤Æ¡¢/usr/lib/Ngraph ¤ËÊü¤ê¹þ¤ó¤Ç¤ª¤¯¡£ ¤³¤ì»È¤¦¤È¡¢¥³¥Þ¥ó¥É¥é¥¤¥ó¤«¤é
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#3 [paper] from arXiv

¡÷ Fractal Growth from Local Instabilities:

We study, both with numerical simulations and theoretical methods, a cellular automata model for continuum equations describing growth processes in the presence of an external flux of particles. As a result of local instabilities we find a fractal regime of growth for small external fluxes. The growing tip is selected with probability proportional to the curvature in the point. A parameter $p$ gives the probability of lateral growth on the tip. The value of $p$ determines the fractal dimension of the aggregate. Furthermore, for each value of $p$ a cross-over between two different fractal dimensions is observed. Instead, the roughness exponent $\chi$ of the aggregates does not depend on $p$ ($\chi \simeq 0.5$). Fixed scale transformation approach is applied to compute theoretically the fractal dimension for one of the branches of the structure.

¡÷ Kinetic roughening with anysotropic growth rules:

Inspired by the chemical etching processes, where experiments show that growth rates depending on the local environment might play a fundamental role in determining the properties of the etched surfaces, we study here a model for kinetic roughening which includes explicitly an anysotropic effect in the growth rules. Our model introduces a dependence of the growth rules on the local environment conditions, i.e. on the local curvatuure of the surface. Variables with different local curvatures of the surface, in fact, present different quenched disorder and a parameter $P$ (which could represent different experimental conditions) is introdueced to account for different time scales for the different class of variables. We show that the introduction of this {\em time scale separation} in the model leads to non-universal roughness properties. The interplay between anisotropy and the non-universality and the dependence of critical properties on parameter $p$ is investigated as well as the relationship with the known universality classes.

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#5 [linux] kondara ¤ÎµóÆ°ÉÔ¿³

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#6 [linux] kondara 2000

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#7 WinLPrt Ver.6.03.6

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#8 [JM] fenv.3 & __setfpucw.3

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#9 Project ¤ÎÏÈ

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