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#2 [URL] DocBook Makefile Templates

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#3 [URL] ¿ôÃͱ黻¤ò²÷Ŭ¤Ë¤·¤è¤¦ (GCC, G77, BLAS, ATLAS)

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#4 [paper] RSI 72(3) March 2001

¡÷ Effect of discharge microwave frequency on electron temperature of electron cyclotron resonance plasma:

Y. Kawai, T. Suzuki, T. Saburi, and Y. Fujii; pp. 1666-1667
The characteristics of argon electron cyclotron resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves were investigated. Experiments were conducted in a fixed magnetic field. It was found that the electron temperatures Te exhibited a trend of Te7.0<Te8.0<Te9.4 (suffixes represent the discharge microwave frequencies).

¡÷ An add-on secondary electron energy spectrometer for scanning electron microscopes:

A. Khursheed and N. Karuppiah; pp. 1708-1714
This article presents an add-on secondary electron energy spectrometer for scanning electron microscopes (SEMs). The add-on unit fits on to the specimen stage of a conventional SEM, and the SEM is operated as normal. As an objective lens, the add-on unit improves the SEMs spatial resolution by around a factor of 4 at a primary beam energy of 1 keV. The add-on unit functions as a multichannel open-loop voltage contrast spectrometer by employing a bandpass deflector/filter unit whose pass energy is ramped with time. The unit is designed to deflect the secondary electrons while leaving the primary beam unaffected. Initial experimental results show that significant voltage and material contrast can be obtained. In a data acquisition time of 0.32 s, a minimum detectable voltage difference of around 54 mV was obtained. Regions of copper and brass that were indistinguishable via the normal secondary electron image, were distinguished with a signal to noise ratio of around 12 by using the add-on spectrometer.

¡÷ Surface potential measurements of electron-irradiated insulators using backscattered and secondary electron spectra from an electrostatic toroidal spectrometer adapted for scanning electron microscope applications:

O. Jbara, M. Belhaj, S. Odof, K. Msellak, E. I. Rau and M. V. Andrianov; pp. 1788-1795
A technique for the accurate determination of the surface potential US and its evolution during irradiation, is proposed. The technique is based on detecting both backscattered (BSE) and secondary electrons (SE) in a scanning electron microscope (SEM). The (BSE + SE) spectra are measured using a compact, highly sensitive electrostatic toroidal spectrometer (ETS), specially adapted for SEM applications. The use of an ETS analyzer set in a SEM for deducing the surface potential from (SE + BSE) spectra of electron irradiated insulators is introduced here. The surface potential is determined, either from the measured maximum energy of the secondary electron peak, or from its beginning. Various dielectric materials such as MgO, Al2O3, Y2O3, mica (potassium silicate aluminum), and Teflon were studied by this technique. Experimental investigations of the beam energy and current effects on the surface potential of bare insulators are reported. The change, due to this surface potential, in some physical quantities such as the amount of BSEs and the most probable energy of their spectral distribution is also studied. The results concerning coated and grounded insulators highlight the influence of the internal electric field on the BSEs energy distribution. An account of the various benefits of using the toroidal spectrometer in the surface potential measurement is also given.

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#11 [paper] PRB 63(6) 1 Feb 2001

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#12 [paper] PRB 63(7) 15 Feb 2001

¡÷ Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2:

M. I. Alonso, K. Wakita, J. Pascual, M. Garriga, and N. Yamamoto; # 075203
We report on the complex dielectric tensor components of four chalcopyrite semiconductors in an optical energy range (1.4-5.2 eV, from 0.9 eV for CuInSe2) determined at room temperature by spectroscopic ellipsometry. Our results were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, and CuGaS2. Values of refractive indices n, extinction coefficients k, and normal-incidence reflectivity R in the two different polarizations are given and compared with earlier data where available. We analyze in detail the structures of the dielectric function observed in the studied energy region. Critical-point parameters of electronic transitions are obtained from a fitting of numerically calculated second-derivative spectra d^2e(w)/dw^2. Experimental energies and polarizations are discussed on the basis of published band-structure calculations.

¡÷ Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO:

S. B. Zhang, S.-H. Wei, and Alex Zunger; #075205
ZnO typifies a class of materials that can be doped via native defects in only one way: either n type or p type. We explain this asymmetry in ZnO via a study of its intrinsic defect physics, including Zn_O, Zn_i, V_O, O_i, and V_Zn and n-type impurity dopants, Al and F. We find that Zn_O is n type at Zn-rich conditions. This is because (i) the Zn interstitial, Zn_i, is a shallow donor, supplying electrons; (ii) its formation enthalpy is low for both Zn-rich and O-rich conditions, so this defect is abundant; and (iii) the native defects that could compensate the n-type doping effect of Zn_i (interstitial O, Oi, and Zn vacancy, V_Zn), have high formation enthalpies for Zn-rich conditions, so these "electron killers" are not abundant. We find that Zn_O cannot be doped p type via native defects (O_i, V_Zn) despite the fact that they are shallow (i.e., supplying holes at room temperature). This is because at both Zn-rich and O-rich conditions, the defects that could compensate p-type doping (V_O, Zn_i, Zn_O) have low formation enthalpies so these "hole killers" form readily. Furthermore, we identify electron-hole radiative recombination at the V_O center as the source of the green luminescence. In contrast, a large structural relaxation of the same center upon double hole capture leads to slow electron-hole recombination (either radiative or nonradiative) responsible for the slow decay of photoconductivity.

¡÷ Resonant photoemission of TiN films:

G. G. Fuentes, P. Prieto, C. Morant, C. Quiros, R. Nunez, L. Soriano, E. Elizalde, and J. M. Sanz; #075403
The bonding and electronic structure of TiN thin films grown by sputtering have been characterized by means of resonant photoemission spectroscopy using synchrotron radiation. Specifically we found a complex resonance profile that exhibits a maximum at 45 eV followed by a second structure at 50 eV. The intensity enhancement observed at 45 and 50 eV is consistent with the resonant photoemission of the Ti 3d states involved in the valence band of TiN and the multiplet configuration of the [Ti 3p^5 3d^2]* excited states. The autoionizing character of the [Ti 3p^5 3d^2]* states could also be confirmed by observation of the corresponding autoionization emission. The resonance is used to determine the Ti 3d contribution to the valence band. The results are in good agreement with calculated Ti 3d partial density of states.

#13 [paper] PRL 63(8) 15 Feb 2001

¡÷ Si(313)12x1: Another metallic stable surface of silicon having a complex reconstructed layer:

Zheng Gai, R. G. Zhao, T. Sakurai, and W. S. Yang; #085301
By means of scanning tunneling microscopy, the Si(313)12x1 surface has been found to be, after Si(111)7x7, another stable elemental semiconductor surface with a metallic nature. On the basis of the details revealed by the high resolution STM images, an atomically rough model consisting of trenches and a variety of building entities has been proposed for the surface structure for further investigation. The common features of major stable silicon surfaces as well as the similarities and differences between these surfaces and their germanium counterparts are discussed in the context of the driving forces behind the reconstruction of elemental semiconductor surfaces.

¡÷ Ion bombardment of reconstructed metal surfaces: From two-dimensional dislocation dipoles to vacancy pits:

O. Rodriguez de la Fuente, M. A. Gonzarez, and J. M. Rojo; #085420
By means of scanning tunnel microscopy the surface morphology of reconstructed Au(001) surfaces has been studied after bombardment with 600 eV Ar ions as a function of dose, in the range of 10^13 to 10^16 ions/cm2, and the experimental results analyzed in the light of molecular dynamics simulations using a glue potential. At low dose (5x10^13 ions/cm^2) new defects, different from the commonly observed vacancy islands are reported. They appear as depressions 0.06 nm deep, with a characteristic width of 1.44 nm. Bombardment with similar doses of Pt(001) show the same general behavior. Molecular dynamics simulations with a realistic glue potential that reproduces the hexagonal-like Au(001) reconstruction, confirm that these depressions are in fact two-dimensional /3 dislocation dipoles originated by the relaxation of vacancy rows on the ridges of the topmost reconstructed layer. These two-dimensional dipoles are seen to dissociate into individual two-dimensional dislocations that display the characteristics of ordinary bulk dislocations, e.g. glide or climb. At higher doses (3x10^14 ions/cm^2), but well below a nominal removal of 1 monolayer, vacancy islands, one atomic spacing high, are seen to nucleate on these depressions. With increasing ion damage these vacancy islands become the dominant feature. For doses of about 10^15 ions/cm^2, other defects related to the reconstruction, such as perpendicular reconstruction domains and unreconstructed patches of (001) square symmetry, become visible.

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#1 [paper] Physics News Update 526

¡÷ #1 All-metal Superconductivity at 40K:

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#4 [paper] Journal of Chemical Physics

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#5 [paper] JAP 89(6) 15 March 2001

¡÷ Vaporization of heated materials into discharge plasmas:

Michael Keidar, Jing Fan, Iain D. Boyd and Isak I. Beilis; pp.3095-3098
The vaporization of condensed materials in contact with high-current discharge plasmas is considered. A kinetic numerical method named direct simulation Monte Carlo (DSMC) and analytical kinetic approaches based on the bimodal distribution function approximation are employed. The solution of the kinetic layer problem depends upon the velocity at the outer boundary of the kinetic layer which varies from very small, corresponding to the high-density plasma near the evaporated surface, up to the sound speed, corresponding to evaporation into vacuum. The heavy particles density and temperature at the kinetic and hydrodynamic layer interface were obtained by the analytical method while DSMC calculation makes it possible to obtain the evolution of the particle distribution function within the kinetic layer and the layer thickness.

¡÷ In situ determination of absolute number densities of nitrogen molecule triplet states in an rf-plasma sheath:

B. Krames, Th. Glenewinkel-Meyer and J. Meichsner; pp.3115-3120
A laser induced fluorescence technique (LIF) in combination with optical emission spectroscopy (OES) and Rayleigh scattering (RS) was applied to investigate absolute number densities of the population of the three nitrogen triplet states C^3¦°u, B^3¦°g, and the metastable A^3¦² u+ in an asymmetric low pressure rf discharge. Primary targets of this investigation were the three lowest vibrational levels (v = 0,1,2) of each triplet state and additionally v = 8 of A^3¦²u+ which can be populated very efficiently in the plasma sheath. Calibration of LIF intensities to absolute densities of A^3¦²u+ and B^3¦°g has been realized by comparison with the signal of the RS experiment done in pure nitrogen gas. Calibration of C^3¦°u which we could not detect by LIF but rather only by OES was achieved after comparing OES and LIF signals of the B^3¦°g state. Excitation energies of the analyzed states range from 6 up to 11.5 eV and the measured number densities differ by about seven orders of magnitude from as much as 1012 cm?3 down to almost 105 cm?3. In addition to the interpretation of the results this article describes the used calibration methods which are partly based on a suggestion made by P. Bogen (Proceedings of the XVI International Conference on Phenomena in Ionized Gases, Invited Papers, edited by W. Botticher, H. Wenk, and E. Schultz-Gulde, Dusseldorf, 1983, pp. 164-173).

¡÷ Chemical modification of sputtered amorphous-carbon surfaces:

Pieter B. Leezenberg, William H. Johnston, and George W. Tyndall; pp.3498-3507
Methods to chemically passivate the surfaces of amorphous-carbon films (a-C) produced by dc magnetron sputtering were studied. The chemical composition of carbon surfaces produced via sputtering are dependent upon the environment to which the carbon is exposed immediately following deposition. When the sputtered film is vented to ambient conditions, free radicals produced at the surface during the deposition process are quenched by reaction with oxygen and/or water to form an oxidized, hydrophilic surface. If the sputtered carbon film is, however, exposed to a reactive gas prior to venting to ambient, the chemical nature of the resulting surface can be modified substantially. Specifically, a less highly oxidized and much more hydrophobic carbon surface is produced when the surface free radicals are quenched via either an addition reaction (demonstrated with a fluorinated olefin) or a hydrogen abstraction reaction (demonstrated with two alkyl amines). Chemical modification of amorphous-carbon films can also be accomplished by performing the sputtering in a reactive plasma formed from mixtures of argon with molecular hydrogen, amines, and perfluorocarbons. The elemental composition of these films, and the relative reactivity of the surfaces formed, were investigated via x-ray photoelectron spectroscopy and contact-angle goniometry, respectively. In the case of sputtering with a mixture of argon and hydrogen, increasing the hydrogen flow results in an increase in the amount of hydrogen incorporated into the carbon film and a decrease in the surface free energy. Sputtering in diethylamine produces an amorphous-carbon film into which nitrogen is incorporated. The free energies of the a-C:N surfaces produced in this process are similar to those of the a-C:H films. Sputtering in a fluorocarbon vapor results in the incorporation of fluorine into the film structure and the formation of very low free-energy surfaces. Increasing the concentration of the fluorocarbon in the sputtering plasma increases the amount of F incorporated into the film. At the highest fluorocarbon flow rates employed, a-C films were produced with stoichiometries and surface free energies comparable to those of bulk Teflon.
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#4 [paper] arXiv cond-matt

¡÷ A thermal Re-emission Model:

Amit Kr. Chattopadhyay; #0103019
Starting from a continuum description, we study the non-equilibrium roughening of a thermal re-emission model for one and two spatial dimensions. Using standard analytical techniques, we map our problem to a generalized version of an earlier non-local KPZ (Kardar-Parisi-Zhang) model. In 2+1 dimensions, the values of the roughness and the dynamic exponents calculated from our theory go like $ \alpha \approx z \approx 1 $ and in 1+1 dimensions, the exponents resemble the KPZ values for low vapor pressure, supporting experimental results. Interestingly, Galilean invariance is maintained althrough.

#5 [URL] Backups

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#6 [thesis] ºÇ¶á¤Î¿ÊĽ

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#7 [JM] º£Æü¤Îºî¶È

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2001ǯ03·î07Æü(¿å) [nǯÆüµ­]

#1 [LDP] 3/7 ¤Î update

#2 [labo] ǯÅÙËöÂçÁݽü

ǯËö¤Î ¤¬Î®¤ì¤¿Ê¬¤Î·êËä¤á¡£ º£ÅÙ´¶È¤¹¤ë 4 ǯÀ¸ 6 ¿Í¤È¼Â¹Ô¡£2h Äø¤Ç¡£

#3 [freshmeat] 3/6 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#4 ¥¢¥¤¥Ü¥ó

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#5 [linux] Debian Bug Rep. #88774

ssh 2.5.1p1-1.8 ¤Î postinst ¤Î¥Ð¥°¡£

#6 [dept] ³Ø²Ê¥á¡¼¥ë¥µ¡¼¥Ð¤Î virus Âкö

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¡÷ AMaViS - A Mail Virus Scanner:

ports ¤Ë¤â¤Ê¤Ã¤Æ¤ë¤·¡¢»È¤¦¤Ê¤é¤³¤ì¤«¤Ê¡£ ¼ÂºÝ¤Ë virus scan ¤¹¤ë¥½¥Õ¥È¤ÏÊ̤ËɬÍ×¤Ë¤Ê¤ë ¤è¤¦¤À¤¬¡¢FreeBSD ¤Ç»È¤¨¤ë¤Î¤Ï Sophos ¤È Kaspersky ¤¯¤é¤¤ ¤é¤·¤¤¡£ *1 Á°¼Ô¤Ë¤Ï ÆüËÜÂåÍýŹ ¤¬¸«¤Ä¤«¤Ã¤¿¡£

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Sophos ÆüËÜÂåÍýŹ¤Î¥Ú¡¼¥¸¤«¤é¤µ¤é¤Ëé¤Ã¤ÆÅþÃ夷¤¿ÈÎÇäÂåÍýŹ¡£ ³ä¤Ë¥ê¡¼¥º¥Ê¥Ö¥ë¤ÊÃÍÃʤ«¤â¤·¤ì¤Ê¤¤¡£ ¤È¤ê¤¢¤¨¤º¥á¡¼¥ë¤òÁ÷¤Ã¤Æ¤ß¤¿¡£

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*1: Linux ¤À¤È ¥È¥ì¥ó¥É¥Þ¥¤¥¯¥í¤Î InterScan VirusWall ¤¢¤¿¤ê¤¬¼êº¢¤½¤¦¤Ê´¶¤¸¤À¤±¤É¡£

#7 ̵Àþ LAN

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2001ǯ03·î08Æü(ÌÚ) [nǯÆüµ­]

#1 [LDP] 3/8 ¤Î updates

(23:19 add)

#2 [URL] from Linux Journal Dec 2000 issue.

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SISAL
SISAL is an efficient functional programming language for numerical computation on both serial and parallel computers. It has advantages of safety and clarity over conventional programming languages, and it parallelizes without programmer intervention on certain machines. (Unfortunately, not Linux for now!)
Selected Computing Sciences Technical Reports (Lucent Tech.)
#54 ¤¬ "Nroff/Troff User's Manual"¡£
fping - a program to ping hosts in parallel
fping is a ping(1) like program which uses the Internet Control Message Protocol (ICMP) echo request to determine if a host is up.
ippl - IP Protocols Logger
ippl is a daemon which logs IP packets sent to a computer. It runs in the background, and displays information about the incoming packets.

#3 [freshmeat] 3/7 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#4 [linux] ReiserFS and NFS

from "Journaling with ReiserFS" on LJ Feb 2001
ReiserFS has problems supporting NFS because 64 bits of information are required to find an object in the tree, and NFS expects to find an inode with just the inode number (32-bits long). The good news is the NFS file handle has enough room to store the extra information ReiserFS needs in order to find the file again later, and other kernel developers have written APIs to give the file system control over some of the file handle. By the time this article is out, there should be public patches to add proper NFS support to ReiserFS.
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#1 [labo] ²Ê¸¦Èñ¤ÎǯÅÙËöÊó¹ð½ñ

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#2 [LDP] 3/9 ¤Î updates

#3 [dept] ³Ø²Ê¥µ¡¼¥Ð

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#4 [linux] mailcrypt

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(load-library "mailcrypt")
(mc-setversion "2.6")
(autoload 'mc-sign-region "mc-toplev" nil t)
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#5 [freshmeat] 3/8 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#6 [labo] Ãíʸµ­Ï¿

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#7 [URL][linux] Exploring SGML DocBook

lwn.net.
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2001ǯ03·î10Æü(ÅÚ) [nǯÆüµ­]

#1 [freshmeat] 3/9 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

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2001ǯ03·î11Æü(Æü) [nǯÆüµ­]

#1 [LDP] 3/10 ¤Î update

#2 [freshmeat] 3/10 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#3 DDR3

µ×¡¹¤Ë DIET ¥â¡¼¥É¤Ç 200kcal ʬ¤Û¤É¤ä¤Ã¤Æ¤ß¤ë¡£ Paranoia ¤¢¤¿¤ê¤À¤È DIET ¥â¡¼¥É¤Ç¤¹¤é­¤¬²ó¤é¤ó...
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#1 [LDP] 3/12 ¤Î updates

#2 [freshmeat] 3/11 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#3 [labo] ǯÅÙͽ»»

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#4 [linux] xtt ¥â¥¸¥å¡¼¥ë²½

sid ¤Ç xtt ¥Õ¥©¥ó¥È fonts.dir ¤¬ Tcap ·Á¼°¤Ë¤Ê¤Ã¤Æ¤¤¤¿¤Î¤ò¼õ¤±¤Æ¡¢ XF86Config ¤Î "Module" ¥»¥¯¥·¥ç¥ó¤Î
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#5 [labo] ÅþÃåµ­Ï¿

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#6 [JM] º£Æü¤Î¥ê¥ê¡¼¥¹

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#7 ¾å³¤¸Î»ö

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#8 [i1124] ÅþÃå

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RJ-45 ¤Î¥¸¥ã¥Ã¥¯¤¬ÉÕ¤¤¤Æ¤¤¤ë¤Î¤À¤¬¡¢¤³¤ì¤Ï¥À¥ß¡¼¤È¤Î¤³¤È¡£ ¤Þ¤¢ÌµÀþ LAN ¤¹¤ë¤Ä¤â¤ê¤Ê¤Î¤Ç¤«¤Þ¤ï¤ó¤¬¡¢ ¤·¤«¤·¤À¤Ã¤¿¤é¡Ö»È¤¨¤Þ¤»¤ó¡×¤È¥Þ¥Ë¥å¥¢¥ë¤Î¤É¤³¤«¤Ë½ñ¤¤¤È¤¤¤Æ¤Û¤·¤¤¤Ê¤¢¡£

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2001ǯ03·î13Æü(²Ð) [nǯÆüµ­]

#1 [LDP] 3/13 ¤Î updates

(12:27 add)

#2 [thesis] ¿ÊĽ

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#3 [freshmeat] 3/12 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#4 [i1124] fips

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#5 [dept] qpopper ¤È ftpusers

/etc/ftpusers ¤Ë̾Á°¤¬¤¢¤ë¥æ¡¼¥¶¤Ï pop ¥¢¥¯¥»¥¹¤Ç¤­¤Ê¤¤¤é¤·¤¤¡£ FreeBSD ¤Ç¤Ï /sbin/nologin ¤Ä¡¼¤Î¤¬¤¢¤ê¡¢ /etc/passwd ¤Î shell ¥Õ¥£¡¼¥ë¥É¤ò¤³¤ì¤Ë¤·¤Æ¤ª¤±¤Ð (/etc/shells ¤Ë̵¤¤¤Î¤Ç) ftp ¥í¥°¥¤¥ó¤â¤Ç¤­¤Ê¤¯¤Ê¤ë¡£ pop ¥ª¥ó¥ê¡¼¥æ¡¼¥¶¤òºî¤ë¤Î¤Ï¤³¤ì¤À¤±¤ÇÎɤ¤¤è¤¦¤À¡£

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2001ǯ03·î14Æü(¿å) [nǯÆüµ­]

#1 [LDP] 3/14 ¤Î updates

(23:37 add)

#2 [thesis] todo

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#3 [labo] IVC-15/AVS-48 Call for Papers

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#4 [freshmeat] 3/13 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#5 [linux] ssh 2.5.1p2-1 (sid)

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#6 ¾åµÜ¤µ¤óÁ÷Ê̲ñ

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#1 [LDP] 3/15 ¤Î update

#2 [labo] ¤ªÇ㤤ʪ

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PIIX4: IDE controller on PCI bus 00 dev 39
PIIX4: not 100% native mode: will probe irqs later
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hda: IBM-DJNA-351520, ATA DISK drive
hdb: TOSHIBA DVD-ROM SD-M1502, ATAPI CDROM drive
hdc: IBM-DJNA-351520, ATA DISK drive
[...]
hdb: ATAPI 48X DVD-ROM drive, 128kB Cache
Uniform CD-ROM driver Revision: 3.11
VFS: Disk change detected on device ide0(3,64)
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#3 [freshmeat] 3/14 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#4 [linux] kernel 2.4 ¤Î potato ¤Ø¤Î backport

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#5 [linux] OMS How-To

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#1 samba-jp ´Ø·¸

sugj-tech ¤ò unsubscribe¡¢ sugj-doc ¤ò subscribe¡£

#2 [i1124] Linux ¥Ï¡¼¥É¥¦¥§¥¢¾ðÊó (ThinkPad)

#3 [labo] ²Ê¸¦Èñ´ØÏ¢½ñÎູ¤·Ìᤷ

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#5 [i1124][linux] ¥¤¥ó¥¹¥È¡¼¥ë (¤È¥Ï¥Þ¤ê)

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¡÷ X ¼þ¤ê:

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¡÷ IBM 10/100M ¥¤¡¼¥µ¥«¡¼¥É¤Îǧ¼±:

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#1 Ææ¤Î¥á¡¼¥ë

Dear Sir
Hello
I don't know japan .
Will you help me?
I visited your site I want to get more information about gold karatage tester .
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Please mail me the most information and catalog and its price.
spam ¤Ç¤Ï¤Ê¤¤¤è¤¦¤À¤¬... ¤Ê¤ó¤À¤³¤ê¤ã¡©

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#2 [freshmeat] 3/23 ʬ¤Î¿·Ãå¥á¡¼¥ë¤«¤é

#3 MATRIX

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#1 [linux] migemo

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#1 [LDP] 3/28 ¤Î updates

#2 [paper] RSI 72(4) April 2001

¡÷ An apparatus for the measurement of internal stress and thermal expansion coefficient of metal oxide films:

Cheng-Chung Lee, Chuen-Lin Tien, Wean-Shyang Sheu and Cheng-Chung Jaing; pp.2218-2133
A measuring apparatus based on a phase shifting interferometry technique to determine the mechanical properties of metal oxide films was presented. Thin films were prepared by ion-beam sputter deposition at low substrate temperature. Quantitative determination of the mechanical properties such as the internal stress, biaxial elastic modulus, and thermal expansion coefficient of metal oxide films were investigated. A phase shifting Twyman˨reen interferometer with the phase reduction algorithm was setup to measure the temperature-dependent stress in thin films. Two types of circular glass plates, with known Young's moduli, Poisson's ratios, and thermal expansion coefficients, were used as coating substrate. The temperature-dependent stress behavior of the metal oxide films was obtained by heating samples in the range from room temperature to 70 ¡ÝC. The stresses of thin films deposited on two different substrates were plotted against the stress measurement temperature, showing a linear dependence. Four oxide films were reported for their film stresses and thermal expansion coefficients.

¡÷ Data reduction in 3¦Ø method for thin-film thermal conductivity determination:

T. Borca-Tasciuc, A. R. Kumar, and G. Chen pp. 2139-2147
The 3¦Ø method has been proven to be very useful for determining the thermal conductivity of thin films and their substrates. Several simplifications are often used in determining the thermal conductivity of the films based on the experimentally measured 3¦Ø signal. These simplifications, however, have limited range of applicability. In this work, we present a detailed analysis and mathematical modeling of the 3¦Ø method applied for different experimental conditions. Effects considered include the finite substrate thickness, anisotropic nature of the film and substrate thermal conductivity, the film-substrate thermal property contrasts, the effect of heat capacitance of the heater, and the effect of thermal boundary resistance. Several experimental results are analyzed using the models presented. This work shows that the 3¦Ø method can be extended to a wide range of sample conditions, with anisotropic conductivities in both the substrate and the film, and with small film-substrate conductivity contrast.

#3 [labo] ¥á¥â¥êÁýÀß

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2001ǯ03·î29Æü(ÌÚ) [nǯÆüµ­]

#1 [LDP] 3/29 ¤Î updates

#2 [labo] APS March Meeting - MgB2 Post deadline session

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#3 [linux] mh has been orphaned

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#4 [linux] sid's xlib 4.0.2-12 conflicts with jgroff?

% sudo apt-get upgrade
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Building Dependency Tree... Done
1 packages upgraded, 0 newly installed, 0 to remove and 2  not upgraded.
Need to get 0B/1170kB of archives. After unpacking 0B will be used.
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#5 [linux] Samba ¤Î LDAP ǧ¾Ú

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#6 [paper] JAP 89(7) 1 April 2001

¡÷ Electric field in inductively coupled gas discharges:

R. Piejak, V. Godyak, and B. Alexandrovich; pp.3590-3593
The electric field in a low-pressure electrodeless discharge has been determined from discharge voltage measurements at constant discharge current as a function of gas pressure. Measurements have been made in neon, argon, and xenon at discharge currents of 1, 3, and 10 A with a driving frequency of 0.45 MHz. The behavior of the electric field as a function of gas pressure has been found to be qualitatively similar for all three gases. At the lowest gas pressures at which a discharge can be sustained, the electric field is relatively high. With increasing gas pressure the field reaches a local minimum, followed by a local maximum and another local minimum. Above 1 Torr, the electric field increases monotonically with gas pressure.

¡÷ Practical scheme for three-dimensional simulation of electron cyclotron resonance plasma reactors:

Yasuyoshi Yasaka and Nobuki Uda; pp.3594-3601
A three-dimensional simulation code which calculates wave propagation, plasma transport, and gas phase chemical reactions self-consistently in an electron cyclotron resonance plasma reactor has been developed. The code is designed to treat the three-dimensional inhomogeneity with a reasonable accuracy in a realistic configuration of the reactor within an acceptable computational time using common computer resources. The profiles of electromagnetic wave fields and the temporal evolution of plasma parameters and radical densities in a bounded, inhomogeneous, cylindrical system have been calculated. The code can resolve azimuthal asymmetry of the plasma associated with a rectangular waveguide coupling or an asymmetric injection of reactive gases as well as the radial and axial variations.

¡÷ Superhardness effects of heterostructure NbN/TaN nanostructured multilayers:

Junhua Xu, Masao Kamiko, Yaomin Zhou, Ryoichi Yamamoto, Geyang Li and Mingyuan Gu; pp. 3674-3678
Although superhardness effects have been extensively investigated for epitaxial ceramic nanomultilayer films with the same crystal structures in the last decade, those for multilayers with different crystal structures have been seldom studied. In this article, NbN/TaN nanomultilayers have been designed and deposited by reactive magnetron sputtering. The results showed that the crystal structures of NbN and TaN are face-centered cubic and hexagonal in superlattice films, respectively, and the lattice plane (111) of NbN is coherent with the (110) of TaN, i.e., {111}fcc-NbN{110}h-TaN. The results of microhardness measurement showed that the superhardness effects of NbN/TaN multilayers exist in a wide range of modulation period from 2.3 to 17.0 nm. This phenomenon is different from that of epitaxial ceramic multilayers where the maximum hardness usually takes place at a modulation period of 5.0?10.0 nm. It is proposed that the coherent stresses and the structural barriers (fcc/hexagonal) to dislocation motion between NbN and TaN layers are the main reasons for the high-hardness value in a wide range of modulation periods.

¡÷ Design and characterization of thin film microcoolers:

Chris LaBounty, Ali Shakouri and John E. Bowers; pp. 4059-4064
Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 ¡î at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 ¡î degrees centigrade cooling with cooling power densities of several 1000 W/cm^2.

¡÷ Secondary electron emission yields from MgO deposited on carbon nanotubes:

Whikun Yi, et al.; pp. 4091-4095
Enormously high secondary electron emission yields under electric field are observed from MgO deposited on carbon nanotubes. The yields reach a value as high as 15 000 and are strongly dependent upon the bias voltage applied to the sample. The creation of the electric field across the MgO film after bombardment of primary electrons is considered as one of key features, since positive charges are generated at the surface by departure of secondary electrons. Subsequent bombarding electrons produce other secondary electrons inside the MgO film, then the liberated secondaries are accelerated towards the surface under the strong field. Under this condition, the secondary electrons gain sufficient energy to create further electrons by impact ionization. The process continues until an equilibrium avalanche is established. To elucidate the earlier explanations, the kinetic energy spectra of secondary electrons are measured by an energy analyzer at various bias voltages in MgO/carbon nanotube samples. The analysis of spectral results with the energy band diagram gives us strong evidence for the suggested mechanism.

¡÷ Formation of ¦Â-C3N4 crystals at low temperature:

J. Wei; pp. 4099-4104
Carbon nitride films with ¦Â-C3N4 crystals of 200 nm grain size were grown on Si (100) substrates using magnetron sputtering. Reactive deposition was achieved using a graphite target in an argon/nitrogen plasma at room temperature. These films were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and Raman spectroscopy. Micro level ¦Â-C3N4 crystal grains were observed with TEM. According to calculations from electron diffraction pattern, these crystalline structures were in a good agreement with hypothetical b-C3N4 structure. AFM measurement also indicated the grain size was around 200 nm and the carbon nitride films had low surface roughness. From XPS data, maximum N/C ratio of 0.5 was achieved in the films. XPS spectra of the films typically showed three peaks in the C 1s core level spectrum (centered at 284.6, 285.9, and 287.2 eV) and two peaks in the N 1s core level spectrum (centered at 398.7 and 400.2 eV). This indicates that there are two types of C-N bonds; N is bonded to sp2- or sp3-coordinated C atoms in the as-deposited films. FTIR spectra showed three absorption bands in the range of 1000?3000 cm?1. The absorption band around 2367 cm?1 can be attributed to CN nitrile bond. The absorption bands around 1559 and 1201 cm?1 demonstrate the existence of CN (sp2) and C?N (sp3) bonds. Analysis of Raman spectrum further demonstrated the coexistence of sp, sp2, and sp3 bonds. All of XPS, FTIR, and Raman measurements showed the presence of fourfold coordinated ¦Â-C3N4 crystals in the films, which is in good agreement with TEM and electron diffraction results.

¡÷ Sputtering and in-plane texture control during the deposition of MgO:

Liang Dong, Luis A. Zepeda-Ruiz and David J. Srolovitz; pp. 4105-4112
iMolecular dynamics simulations are performed to study the fundamental role of the ion beam in determining the in-plane texture of 100 oriented (out-of-plane) MgO films during ion beam assisted deposition (IBAD). Sputter yields are determined as a function of in-plane orientation for Ar ion beams. The minimum sputter yield exists at an ion beam orientation corresponding to the MgO 110 direction. The finite width of the sputter yield minimum is attributable to two main factors: (i) only a fraction of the incident ions are oriented to travel directly down the center of the channel and (ii) ions that are not exactly parallel to the channeling direction may channel. While the simulations imply that it is possible to in-plane orient {001} MgO films using IBAD, there are fundamental limitations on the degree of ordering that can be achieved.

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2001ǯ03·î30Æü(¶â) [nǯÆüµ­]

#1 [paper] cond-mat

¡÷ 0103475: Coulomb Explosion and Thermal Spikes:

A fast ion penetrating a solid creates a track of excitations. This can produce displacements seen as an etched track, a process initially used to detect energetic particles but now used to alter materials. From the seminal papers by Fleischer et al. [Phys. Rev. 156, 353 (1967)] to the present [C. Trautmann, S. Klaumunzer and H. Trinkaus, Phys. Rev. Lett. 85, 3648 (2000)], `Coulomb explosion' and thermal spike models are treated as conflicting models for describing ion track effects. Here molecular dynamics simulations of electronic-sputtering, a surface manifestation of ion track formation, show that `Coulomb explosion' produces a `heat' spike so that these are early and late aspects of the same process. Therefore, differences in scaling are due to the use of incomplete spike models.

#2 [JF] NIS-HOWTO

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#4 [labo] Agilent IntuiLink

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# cp -r /etc/bind etc
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# cp /etc/localtime etc

# mkdir var/cache/named var/run
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# cd lib
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#5 [JF] resolve some reservations

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#7 [linux] dvorak7min

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#8 [JM] LDP man-pages 1.35

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#9 [paper] PHYSICAL REVIEW FOCUS 30 MAR 2001

¡÷ INTERNET PLAGUES SPREAD RAPIDLY:

If there's an outbreak of the flu in your city, you can count on the Centers for Disease Control for help, but if it's the "I Love You" bug, forget it. That's because viruses spread differently on the internet than they do in the real world, according to a paper in the 2 April PRL. While a biological disease can only spread from person to person, a digital virus can reach many computers simultaneously from a single server. This difference in transmission makes computer viruses all but impossible to eliminate, according to the authors, but the model they describe may lead to better strategies for protecting the electronic world.
(R. Pastor-Satorras and A. Vespignani, Phys. Rev. Lett. 86, 3200. )

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