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Namazu for hns による簡易全文検索
cd /usr/lib mv libstdc++libc6.2-2.so.3 libstdc++-libc6.2-2.so.3 ldconfigでとりあえず解決。
St = rSTEP * fft(Pt)とすることによって良い感じになった。
メタデータ/RDFの応用として利用されているXMLフォーマットの代表として、RSS (RDF Site Summary) があげられます。共通の書式でドキュメントの見出し、要約などのリストを提供することで、サイトの更新情報などを効率的に公開できます。スラッシュドットのような著名サイトでも採用されており、積極的に活用するとウェブ上の情報共有の新しい姿が見えてきそうです。
We studied the properties of (Nb0.7,Ti0.3)N films deposited by reactive magnetron sputtering in an atmosphere of argon and nitrogen at ambient substrate temperature, with a particular focus on the technological factors that determine film texture. The texture in the nitrides of transition metals determines many processes, including the wear resistance of tool coatings, diffusion in microelectronic devices, and the rate of chemical etching. Thus, since our goal is to use (Nb0.7,Ti0.3)N films in superconducting microelectronic devices, texture control is an essential element of our technology. We find that increasing the total gas pressure, while keeping the film chemical composition constant, results in a decrease in the ratio of the  and  x-ray diffraction (XRD) line intensities on θ-2θ Bragg-Brentano scans. Similar changes in XRD patterns are observed as the nitrogen injection increases for a constant sputtering pressure. In addition, XRD examination shows that some samples have in-plane texture developed due to self-shadowing during growth. Transmission electron microscopy reveals that all of the films consist of textured, elongated grains. Analyzing the experimental data, it is concluded that the thermalization of the sputtering yield determines the process of texture formation in the experiment with pressure variation, with an increase in adatom energy resulting in a change in texture from  to . However, adatom energy is not the only determining factor--the nitrogen concentration in the sputtering gas also has a strong impact on the film texture. In particular, despite the fact that an increase in nitrogen injection results in an increase in adatom energy, the film texture is driven toward .ふむ。
The improvement of the diffusion barrier performance for Cu metallization, by inserting a thin Al layer between two TiN layers, has been clearly demonstrated and reported by us. The key idea behind our scheme is "stuffing" of grain boundaries of columnar TiN films by Al2O3. It has been also found that the barrier property is at its best when the Al thickness is 1 nm, but above this value, the barrier performance degrades drastically when the upper TiN film is not preannealed. In this study, why the barrier breaks down at above 1 nm of Al interlayer thickness is investigated. High-resolution transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive spectroscopy analyses revealed that the fast diffusion of Cu in the presence of the free Al is the main reason for the failure of the present diffusion barrier scheme. These results are discussed on the basis of the differences between the movements of Al and Cu through TiN film, and the differences between the solid solubilities of Al in Cu and in Si. Our results show that both Al interlayer thickness and the oxygen content in TiN film should be properly controlled to take full advantage of the present multilayer diffusion barrier scheme.