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find $BASE -maxdepth 3 -mtime +$DAYSOLD | xargs rm -rfの方がいいか。
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MgO thin films were prepared using two sols (hydrolyzed sol and stabilized sol) and the ion-induced secondary electron emission behavior of the resultant thin films was investigated. A severe fluctuation in the secondary electron emission current was found in MgO films from hydrolyzed sol. The instability of the ion-induced current was due to the nanosized pores, which were formed during the topotactic reaction of Mg(OH)2 to MgO. Nonhydrolyzed MgO films, however, showed a stable ion-induced current. The ion-induced secondary electron emission coefficients (i) of the MgO films had a maximum of 0.95±0.02 when the films were heat treated at 550 °C in O2. The change in i of nonhydrolyzed films was discussed from the viewpoint of crystallinity, residual organics, and surface roughness. The high i and low processing temperature of nonhydrolyzed MgO films revealed that the sol?gel process is suitable to prepare MgO films for use as a protective layer in ac plasma display panel cells.
Three series of MgO thin films were prepared by the spin coating of MgO precursor solutions (aqueous and organic based solutions) and by electron-beam evaporation. The quality of the films coated on the Si (100) substrate was characterized by observing crystallinity and surface roughness of the films. The measurement of the secondary electron emission (SEE) yield of the MgO films does not reveal any significant dependence on the MgO film fabrication process. However, it was found that the magnitude of the SEE yield is strongly dependent on the sample bias voltage. The maximum SEE yield of over 6 was obtained for the films prepared by both aqueous and organic based solutions. MgO layer formation by precursor solutions is a promising method considering the fact of its easiness and convenience, which also gives a relatively large SEE yield comparable to the MgO layer prepared by electron-beam evaporation.